Cascode scheme for improved device switching behavior

a transistor and field effect technology, applied in the direction of diodes, pulse techniques, semiconductor/solid-state device details, etc., can solve the problems of unsatisfactory cascode/composite devices and certain characteristics

Active Publication Date: 2014-11-25
ALPHA & OMEGA SEMICON INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The proposed solutions significantly improve the turn-on speed while controlling the turn-off speed, reducing transition losses and mitigating electromagnetic interference and circuit failures, resulting in more efficient and reliable power circuit switching.

Problems solved by technology

Certain characteristics exhibited by the cascode / composite device are not ideal.

Method used

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  • Cascode scheme for improved device switching behavior
  • Cascode scheme for improved device switching behavior
  • Cascode scheme for improved device switching behavior

Examples

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embodiments

[0040]FIG. 3A illustrates a schematic circuit diagram that resolves the issues of slow turn-on / fast turn-off while keeping the above principles in mind. By way of example and not by way of limitation, the low voltage normally-off device 305 may be a MOSFET with a gate electrode 307, source electrode 311, and drain electrode 309. The high voltage normally-on device 303 may be a JFET with a gate electrode 313, source electrode 317, and drain electrode 315. While this particular example illustrates a MOSFET in series with a JFET, it is important to note that any combination of a high-voltage normally-on device in series with a low-voltage normally-off device may be used to implement a corresponding circuit structure in order to resolve turn-on / turn-off issues.

[0041]To accomplish both fast turn-on and slow-turn off, a control circuit, e.g., an external gate resistance circuit 319 in combination with a low JFET internal gate resistance, may be used to control the voltage and current flow...

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Abstract

A switching device includes a low voltage normally-off transistor and a control circuit built into a common die. The device includes source, gate and drain electrodes for the transistor and one or more auxiliary electrodes. The drain electrode is on one surface of a die on which the transistor is formed, while each of the remaining electrodes is located on an opposite surface. The one or more auxiliary electrodes provide electrical contact to the control circuit, which is electrically connected to one or more of the other electrodes.

Description

FIELD OF INVENTION[0001]Embodiments of the present invention are related to a cascoded field effect transistor scheme for improved device switching behavior.BACKGROUND OF INVENTION[0002]Many circuits involve the use of what is known as a Baliga-pair (i.e., cascode / composite device) to perform switching during operation. FIG. 1A is a schematic diagram illustrating one of these cascode devices. A cascode / composite device 101 comprises a low-voltage normally-off device 105 in series with a high-voltage normally-on device 103. Hereinafter, cascode device, composite device, and package will be used interchangeably to describe the above mentioned device. The low-voltage normally-off device 105 includes a gate 107, source 111, and drain 109. By way of example, and not by way of limitation, the low-voltage device may be a metal-oxide-semiconductor field effect transistor (MOSFET). The high-voltage normally-on device 103 also includes a gate 113, a source 117, and a drain 115. By way of exam...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): H03K17/687H01L27/06H01L27/085H03K17/04H03K17/10H03K17/567H01L23/528
CPCH03K2017/6875H03K17/0406H01L27/085H01L27/0629H03K17/6871H03K17/102H03K17/567H01L2224/73265H01L2924/12032H01L2924/1305H01L2924/13055H01L2924/13091H01L2924/00
InventorBHALLA, ANUPLUI, SIKHU, JUNWANG, FEI
OwnerALPHA & OMEGA SEMICON INC