Semiconductor device and method for manufacturing the same
a technology of semiconductors and semiconductors, applied in semiconductor devices, electrical devices, nanotechnology, etc., can solve the problems of increasing the rate of degradation of inter-poly insulating films, dielectric breakdown, and increasing leakage curren
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first embodiment
[0031]FIG. 1 is a plan view of a semiconductor device according to a first embodiment, specifically, FIG. 1 is the plan view, which illustrates a plurality of nonvolatile memory cells (hereinafter referred to simply as memory cells) that constitute a memory cell array in the semiconductor device.
[0032]FIG. 2 is a sectional view (sectional view along the channel length direction) taken along line 2-2′ of FIG. 1 and FIG. 3 is a sectional view (sectional view along the channel width direction) taken along line 3-3′ of FIG. 1.
[0033]The memory cell array constitutes a NAND flash memory. Specifically, the semiconductor device is adapted for use in electronic equipment, such as a music playback device, which is equipped with a nonvolatile memory.
[0034]Each memory cell includes a tunnel insulating film, a floating gate electrode, a control gate electrode, an interelectrode insulating film, and source / drain regions. The memory cell of the present embodiment will be further described hereinaf...
second embodiment
[0059]FIG. 14 is a sectional view showing a semiconductor device according to a second embodiment. FIG. 14 is the sectional view in the channel length direction corresponding to FIG. 2. In FIG. 14, the portions corresponding to the portions shown in the previously mentioned drawings are denoted by the same reference numerals and omitted its detail explanation.
[0060]The present embodiment is different from the first embodiment in that a silicon nitride film 9 is provided on the side surface of the floating gate electrode 3. The reason for providing the silicon nitride film 9 is to prevent the floating gate electrode 3 from being oxidized in the oxidation step for making the grain size of the silicon grains smaller in FIGS. 12A and 12B. The prevention of oxidation of the floating gate electrode 3 leads to the prevention of degradation of its performance as an electrode. The present embodiment can also provide the same advantages as the first embodiment.
[0061]One method of forming the ...
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