Method for forming grid medium layer and estimating its electrical parameter

Abstract

A method for evaluating the electrical parameters of the gate dielectric layer, comprising: measuring the film physical characteristic parameters of the gate dielectric layer and the electrical parameters of the device formed by the gate dielectric layer; fitting the physical characteristic parameters and electrical parameters The correlation curve between the electrical parameters and the calculation of the correlation coefficient; Find out the physical characteristic parameters that have a large correlation with the electrical parameters; Online measurement of the physical characteristic parameters of the gate dielectric layer; Through the physical characteristic parameters with a large correlation coefficient with the electrical parameters Estimate electrical parameters. The method of the invention can evaluate the electrical parameters of the grid dielectric layer on-line.

Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for evaluating electrical parameters of a gate dielectric layer and forming a gate dielectric layer. Background technique

[0002] With the development of semiconductor technology, more devices need to be integrated in a limited area, and the size of corresponding devices needs to be reduced. With the help of advanced photolithography technology, such as 193nm, 157nm and immersion exposure technology, the gate length representing the semiconductor process level can reach 90nm, or even 65nm. The turn-on voltage applied to the gate gradually becomes smaller, and correspondingly, the thickness of the gate dielectric layer becomes thinner, so as to increase the response speed of the device. In particular, for the current semiconductor process of 90nm and below, the thickness of the gate oxide has been reduced to 5nm or even smaller. Chinese patent appli...

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