Method for growing silicon carbide single crystal by using high-density material block

Abstract

The invention discloses a method for growing a silicon carbide single crystal by using a high-density material block, belonging to the technical field of the preparation of semiconductor materials. The method comprises the steps of: (1) preparing a high-density silicon carbide material block, (2) underlaying the high-density silicon carbide material block in the step (1) with a cushion block to ensure that the material block is not in contact with a crucible, and placing the material block at the bottom of the crucible to be used as a raw material, and (3) placing a seed crystal at the top ofthe crucible, and growing the silicon carbide single crystal with a physical gaseous phase transmission method. The method solves the problem that powder is in direct contact with the crucible and realizes radiative heat transfer between the inner wall of the crucible and the aerial material block, the grown single crystal is uniform and symmetrical, and the content of impurities in the single crystal is greatly reduced.

Description

technical field [0001] The invention relates to a method for growing a silicon carbide single crystal, belonging to the technical field of semiconductor material preparation. Background technique [0002] As a wide bandgap semiconductor material, silicon carbide single crystal has excellent physical and electrical properties such as high thermal conductivity, high breakdown field strength, and high saturation electron drift rate. It is widely used in aerospace, ocean exploration, radar communication, and automotive electronics. The field has great application prospects. [0003] At present, the physical gas phase transport method is generally used for growing silicon carbide single crystals, that is, the raw materials are sublimated into gas phase substances in the high temperature area, and the gas phase substances are transported to the surface of the seed crystal with a certain distance from the surface of the raw material and at a lower temperature under the action of th...

AI Technical Summary

Problems solved by technology

Affected by the relative position of the crucible in the induction coil, and the thermal conductivity between the powders is poor, the remaining material is generally waist-shaped or cone-shaped in the middle, and the graphitization of the outside is serious

Moreover, the use of powder growth is easy to introduce impurities, which evaporate to the surface of the seed crystal during the high-temperature growth process, causing various crystal defects