Micro-electro-mechanical device and manufacturing method thereof
A technology of micro-electromechanical devices and manufacturing methods, applied in the directions of micro-structural devices, manufacturing micro-structural devices, processing micro-structural devices, etc., capable of solving problems affecting the functions of micro-electro-mechanical devices and limited etching resistance
Active Publication Date: 2011-08-10
RICHWAVE TECH CORP
View PDF7 Cites 4 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, in the aforementioned etching process, since the etching resistance of the etching mask played by the patterned metal film layer is still limited, the profile of the prepared micro-machined structure may not be the expected shape, and the final micro-machined structure may not be as expected. Part of the film layer in the processing structure may be partially or even completely removed by the etching process used, thus affecting the function of the final MEMS device
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0040] Figure 1 to Figure 7 It is a series of cross-sectional views showing a manufacturing method of a micro-electro-mechanical device according to an embodiment of the present invention, which is used to ensure the integrity of the structural film layer of the prepared micro-machined structure and ensure the function of the micro-electro-mechanical device including the micro-machined structure sex.
[0041] Please refer to figure 1 Firstly, a semiconductor substrate 10 is provided. Such as figure 1 As shown, the semiconductor substrate 10 is a semiconductor wafer that has not been divided, and several integrated circuit regions (not shown) that have been substantially prepared but not divided have been formed thereon. For purposes of simplified illustration, here figure 1 Fabrication of micromachined structures for MEMS devices within the area of an integrated circuit is only partially shown in FIG. Such as figure 1 As shown, an integrated circuit chip area on th...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a micro-electro-mechanical device and a manufacturing method thereof, and the manufacturing method comprises the following steps: providing a semiconductor substrate comprising a semiconductor layer and an interconnection structure; then forming a protecting layer and a photoresist layer on the interconnection structure, forming a plurality of openings for exposing one part of the protecting layer in the photoresist layer, and removing the protecting layer exposed through the openings and the interconnection structure below the protecting layer so as to form a plurality of first trenches; partially removing the semiconductor layer exposed through the first trenches so as to form a plurality of second trenches in the semiconductor layer; attaching an upper cover substrate on the protecting layer for forming a compound substrate, thinning the semiconductor layer in the compound substrate, and retaining the thinned semiconductor layer; and finally partially removing the thinned semiconductor layer and forming a third trench so as to form a suspended micro-processing structure in a region among the first trenches, the second trenches and the third trench.
Description
technical field [0001] The present invention relates to the fabrication of microelectromechanical system device (MEMS device), and in particular to a fabrication method of the microelectromechanical system device, so as to ensure the damage of the dielectric film layer or the metal film layer of the microfabricated structure therein. Background technique [0002] Micro-electro-mechanical devices have been widely used in inertial measurement, pressure sensing, temperature measurement, micro-fluidics, optics and radio frequency communication, etc., and its application range is gradually expanding and extending. Existing MEMS devices such as accelerometers, pressure sensors, flow sensors, and the like typically include suspended micromachined structures that typically include released portions and adhesive The column part attached to the substrate has a space or gap between the release part and the substrate. [0003] Generally speaking, when fabricating the microfabricated st...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & AuthorityApplications(China)
IPC IPC(8): B81C3/00B81B7/02B81C1/00
Inventor刘慈祥
OwnerRICHWAVE TECH CORP