Aluminum alloy plate and producing method thereof

A technology of aluminum alloy plate and manufacturing method, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the problems of low thermal expansion coefficient, insufficient flexibility, easy cracking of glass substrates, etc., and achieve high continuous Productivity, elimination of defects in manufacturing efficiency, and excellent high-temperature resistance

A technology of aluminum alloy plate and manufacturing method, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the problems of low thermal expansion coefficient, insufficient flexibility, easy cracking of glass substrates, etc., and achieve high continuous Productivity, elimination of defects in manufacturing efficiency, and excellent high-temperature resistance

CN102168215AActive Publication Date: 2011-08-31FUJIFILM CORP +1
25 Cites 6 Cited by

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Aluminum alloy plate and producing method thereof
  • Aluminum alloy plate and producing method thereof
  • Aluminum alloy plate and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0155] Hereinafter, although an Example and a comparative example demonstrate this invention, this invention is not limited to these specific examples.

[0156] (Manufacturing example of aluminum alloy plate)

[0157] Aluminum ingots with an aluminum purity of 99.9, 99.96, and 99.93% by mass were prepared, and the following treatments were sequentially performed using aluminum rolled sheets composed of aluminum alloy components shown in Table 1 in which Cu was added to adjust the copper concentration. Al-3 used an ingot with an aluminum purity of 99.93%, and Al-4 used an ingot with an aluminum purity of 99.96%. Al-1, 2, 5, 6, 7, and 8 use aluminum ingots with an aluminum purity of 99.99%. Al-9 and 10 reproduce the composition described in Patent Document 1. Al-11, 12, and 13 reproduce the composition of JIS3004 material, 6015 material, and 1050 material respectively. Al-1-7 are used in the examples of the present invention, and Al-8-13 are used in comparative examples.

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention provides a an aluminum alloy plate which has good insulating properties, good voltage resistance and good high temperature resistance and a producing method of the aluminum alloy plate. The aluminum alloy plate of a substrate with insulating properties comprises 0.6-3.0 mass% of copper and other elements which contains less than 0.1 mass% of unavoidable impurities except aluminum and copper.

Description

technical field [0001] The present invention relates to an aluminum alloy plate and a manufacturing method thereof. The aluminum alloy plate is preferably used as a thin-film solar cell substrate or a printed circuit board, and has excellent high-temperature strength and withstand voltage characteristics. Background technique [0002] Solar cells are broadly classified into three types: (1) monocrystalline Si solar cells, (2) polycrystalline Si solar cells, and (3) thin-film solar cells. Compared with monocrystalline Si solar cells and polycrystalline Si solar cells that use Si wafers as substrates, thin-film solar cells use various substrates such as glass substrates, metal substrates, and resin substrates, and form thin-film light-absorbing layers on these substrates. [0003] As the light absorbing layer, Si-based thin films of amorphous Si or nanocrystalline Si, compound-based thin films such as CdS / CdTe, CIS (Cu-In-Se), and CIGS (Cu-In-Ga-Se) are used. In addition, by ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
31 Aug 2011
Publication
CN102168215A
IPC
C22C21/12; H01L31/048; H01L31/18; H01L31/20
CPC
Y02E10/50; Y02E10/541; Y02P70/50
Inventors
泽田宏和; 上杉彰男