Integrated circuits and fabrication methods thereof

A technology of integrated circuits, dimensions, applied in the direction of circuits, electrical components, electro-solid devices, etc., can solve problems such as increasing the complexity of processing and manufacturing IC

Active Publication Date: 2012-07-11
TAIWAN SEMICON MFG CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these advances have increased the complexity of handling and fabricating ICs and, fo...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated circuits and fabrication methods thereof
  • Integrated circuits and fabrication methods thereof
  • Integrated circuits and fabrication methods thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] It is understood that the following disclosure provides many different embodiments, or examples, for implementing different components of various embodiments. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, references below to a first component being formed "over" or "on" a second component may include embodiments in which the first and second components are formed in direct contact, and may also include references to the first and second components. Embodiments where additional components are formed between components such that the first and second components may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and / or text in various instances. This repetition is for simplicity and clarity and does not in itself illustrate a relationship between the various embodiments and / or config...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An integrated circuit includes a signal line routed in a first direction. A first shielding pattern is disposed substantially parallel with the signal line. The first shielding pattern has a first edge having a first dimension and a second edge having a second dimension. The first edge is substantially parallel with the signal line. The first dimension is larger than the second dimension. A second shielding pattern is disposed substantially parallel with the signal line. The second shielding pattern has a third edge having a third dimension and a fourth edge having a fourth dimension. The third edge is substantially parallel with the signal line. The third dimension is larger than the fourth dimension. The fourth edge faces the second edge. A first space is between the second and fourth edges.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from US Provisional Patent Application Serial No. 61 / 407,509, filed October 28, 2010, the entire contents of which are incorporated herein by reference. . technical field [0003] The present disclosure relates generally to the field of semiconductor devices, and more particularly, to integrated circuits and methods of fabrication thereof. Background technique [0004] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design gave rise to the IC era, with each generation having smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of handling and fabricating ICs and, for these advancements to be realized, similar developments in IC processing and fabrication are required. [0005] In the course of IC evolution, functional density (i.e., the number o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/58
CPCH01L2924/0002H01L23/5225H01L2924/00H01L23/552H01L27/0248
Inventor 陈重辉
Owner TAIWAN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap