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Semiconductor structure and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as uneven performance of components, achieve the effect of overcoming uneven performance of components and improving overall quality

Active Publication Date: 2012-11-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a semiconductor structure and its manufacturing method, which overcomes the problem of non-uniform performance of components introduced by using a thermal annealing process for a semiconductor wafer in the current integrated circuit and its manufacturing method

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0033] It should be understood that the following disclosure provides many different embodiments or examples to illustrate different features of different embodiments. The specific embodiments of the components and components described below are used to simplify the invention. Of course, in other words, only examples are not used to limit the present invention. In addition, the disclosure of the present invention may repeat similar reference numerals in different embodiments. Such repetition is for the purpose of simplification and clarity, and such repetition itself does not specify the relationship between the different embodiments and / or structures discussed. Furthermore, a first feature formed in or on the second feature in the following content may include an embodiment of forming the first feature and the second feature in direct contact, and may also include forming the first feature and the second feature Between the additional features of the embodiment, the first an...

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Abstract

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a semiconductor substrate having a device region and a dummy region adjacent the device region; a plurality of active regions in the device region; and a plurality of dummy active regions in the dummy region, where each of the active regions has a first dimension in afirst direction and a second dimension in a second direction perpendicular to the first direction, and the first dimension is substantially greater than the second dimension; and each of the dummy active regions has a third dimension in the first direction and a fourth dimension in the second direction, and the third dimension is substantially greater than the fourth dimension. The plurality of dummy active regions are configured such that thermal annealing effect in the dummy region is substantially equal to that of the device region.

Description

Technical field [0001] The present invention relates to a semiconductor manufacturing process, and particularly relates to a semiconductor structure and its manufacturing method. Background technique [0002] Semiconductor manufacturers process semiconductor wafers to form various integrated circuits in different areas of the wafer. These areas are called semiconductor grains. The integrated circuit formed in each semiconductor die includes a plurality of semiconductor components, which have active devices, such as transistors, diodes, or memory devices. Semiconductor components can also include passive components, such as resistors or capacitors. Various semiconductor processes can be used to form semiconductor components, such as etching, lithography, ion implantation, thin film deposition, or thermal annealing. However, the current integrated circuit and its manufacturing method using a thermal annealing process for a semiconductor wafer introduces the problem of uneven com...

Claims

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Application Information

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IPC IPC(8): H01L27/04H01L21/77H01L21/324
CPCH01L27/11H01L21/324H01L27/0207H10B10/00
Inventor 王立廷黄俊仁
Owner TAIWAN SEMICON MFG CO LTD
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