An Extended Bit Line Strobe Device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI
- Publication Date
- 2016-03-16
Smart Images
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Abstract
Description
technical field
[0001] The invention relates to the field of memory, in particular to an extended bit line gating device of a memory array. Background technique
[0002] As the demand for high-density storage arrays increases, storage arrays with virtual land structures are more and more widely used in storage devices. Virtual land structure storage array see figure 1 , the memory cells cell00, cell01...cellMN of the memory array 10 are arranged into an array in the form of M rows and N columns, each memory cell includes a plurality of connection ports, and one of the connection ports is used as a control port and word line selection The two connection ports are respectively connected to a bit line, and the bit line is connected to the bit line gating device 11, and the bit line connection ports of each column of memory cells share the same bit line with the memory cells of adjacent columns. figure 1 The bit line connection port of the memory cell in the column where the m...