Laser device and method for adjusting and controlling passively Q-switched laser output characteristics through Cr<4>+: YAG crystal anisotropy characteristics
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology with anisotropy and output characteristics, applied in the field of lasers, which can solve problems such as increased cost and cumbersome process
Inactive Publication Date: 2014-08-13
HARBIN INST OF TECH
View PDF5 Cites 6 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0003] In order to solve the routine replacement of Cr 4+ : YAG crystal to achieve the change of the initial transmittance and then realize the process of adjusting and controlling the passive Q-switched laser output characteristics. 4+ Laser device and method for controlling multiple output characteristics of passive Q-switched laser by YAG crystal anisotropy
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
specific Embodiment approach 1
[0017] Specific implementation mode one: as figure 1 and figure 2 As shown, this embodiment provides a method using Cr 4+ : YAG crystal anisotropy characteristics to regulate the laser device of passive Q-switched laser output characteristics, the device includes a semiconductor laser pump source 1, a first aspheric lens 2, a second aspheric lens 3, which are arranged in sequence along the beam propagation direction, Laser front cavity mirror 4, laser crystal 5, polarizer 6 (if the laser crystal produces linearly polarized laser light, this component may not be added), adjustment frame with rotation adjustment function 7, Cr 4+ : YAG crystal 8, laser output mirror 9, laser front cavity mirror 4 and laser output mirror 9 constitute the resonant cavity of the laser oscillator.
[0018] In this embodiment, the laser light emitted by the semiconductor laser pump source 1 is collimated and focused by the first aspheric lens 2 and the second aspheric lens 3, and then enters the l...
specific Embodiment approach 2
[0025] Specific embodiment two: this embodiment uses the device described in specific embodiment one to realize Cr 4+ : The adjustment of the output performance of YAG crystal passively Q-switched laser is realized by the following steps:
[0027] Step 2. Rotate the adjustment frame 7 to change the Cr 4+ : The angle β between the YAG crystal orientation [xxx] and the polarization direction of the oscillating laser is 11, which can flexibly adjust the output characteristics of the passive Q-switched laser, such as changing the output pulse energy, pulse repetition frequency, pulse width, etc.
[0028] exist Figure 3-Figure 5 During the implementation in Cr 4+ : The initial transmittance of YAG crystal 8 is 90%, and the cutting crystal direction is along the [100] direction, figure 2 The [xxx], [yyy], and [zzz] crystal orientations are [001], [010], and [100], respectively. The length of the reso...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
Disclosed are a laser device and method for adjusting and controlling passively Q-switched laser output characteristics through Cr<4>+: YAG crystal anisotropy characteristics. The device comprises a semiconductor laser pumping source (1), a first aspherical lens (2), a second aspherical lens (3), a laser front cavity mirror (4), a laser crystal (5), an adjusting frame (7) with a rotary adjusting function, a Cr<4>+: YAG crystal (8) and a laser output mirror (9), wherein the semiconductor laser pumping source (1), the first aspherical lens (2), the second aspherical lens (3), the laser front cavity mirror (4), the laser crystal (5), the adjusting frame (7), the Cr<4>+: YAG crystal (8) and the laser output mirror (9) are arranged in sequence in the beam propagation direction. The method comprises the first step of constructing Cr<4>+: YAG crystal passively Q-switched laser output, and the second step of rotating and adjusting the adjusting frame to achieve anisotropy changes of Cr<4>+: YAG crystal energy transmittance in a laser resonance cavity, and finally adjusting and controlling the passively Q-switched laser output performance. According to the device and method, the passively Q-switched laser output performance is controlled through the Cr<4>+: YAG crystal anisotropy energy transmittance, and the method is simple and easy to implement.
Description
technical field [0001] The invention belongs to the field of laser technology and relates to a Cr-based 4+ Disclosed is a laser device and method for regulating passive Q-switched laser output characteristics by YAG crystal anisotropy. Background technique [0002] Q-switching technology is the best way to obtain high repetition frequency, high peak power, and narrow pulse width laser. During the development of laser technology, a variety of Q-switching technologies have been invented and successfully applied to laser systems. However, many technologies are Has its own advantages and disadvantages and applicable conditions. Since passive Q-switching technology does not require high-voltage electric pulses or radio-frequency modulation required in the process of electro-optic Q-switching or acousto-optic Q-switching, the structure is simple, it is not sensitive to external electromagnetic interference, and the length of the resonant cavity can be compressed to a very short ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more 
Login to view more