47 results about "Crystal anisotropy" patented technology

A manufacturing method for a substrate for an ink jet head, including formation of an ink supply port in a silicon substrate, the method includes a step of forming, on one side of the substrate, an etching mask layer having an opening at a position corresponding ink supply port; a step of forming unpenetrated holes through the opening of the etching mask layer in at least two rows in a longitudinal direction of the opening; and a step of forming the ink supply port by crystal anisotropic etching of the substrate in the opening.

A method of manufacturing an optical element module 1 in which an optical element 8 and a semiconductor circuit element 9 are mounted on one surface of a silicon substrate 2, a mirror surface 2a inclined at approximately 45 degrees is formed on the other surface, and an optical fiber 7 facing the mirror surface is disposed in a V groove formed along the other surface, the method of manufacturing includes the steps of forming the mirror surface 2a and V-shaped side surfaces of the V groove simultaneously by first crystal anisotropic etching on the other surface, and forming an attaching surface 2b substantially perpendicular to the one surface and the other surface, which is formed at an end side of the V groove, and for attaching an end of the optical fiber 7, by second crystal anisotropic etching in a crystal plane orientation different from that of the first crystal anisotropic etching. Thereby, it is possible to realize an optical element module including an optical element that receives light or emits light, a semiconductor circuit element, and an optical fiber optically connected to the optical element, the optical element module highly-functionally performs an optical connection between the optical element and the optical fiber, and realize a method of efficiently manufacturing the optical element module.

A method for manufacturing a liquid discharge head including a substrate on which supply ports for supplying a liquid are provided, includes forming a first supply port among the supply ports by performing crystal anisotropic etching on the substrate from one surface of the substrate, and forming a plurality of second supply ports among the supply ports by performing dry etching on the substrate using a crystal anisotropic etching method from a surface exposed toward the one surface of the substrate to a rear surface so that the independent second supply ports are respectively opened on the rear surface.

Provided is a polycrystal MgO sintered body which is capable of having a sintered density close to a theoretical density thereof, and exhibiting excellent mechanical properties and heat conductivity, while reducing contamination of an atmosphere due to gas generation, and a production method for the sintered body. The polycrystal MgO sintered body has a unique crystalline anisotropy in which (111) faces are oriented along a surface applied with a uniaxial pressure at a high rate. The polycrystalline MgO sintered body is obtained by a method which comprises the steps of: sintering an MgO raw material powder having a particle size of 1 μm or less, under a uniaxial pressure; and then subjecting the sintered powder to a heat treatment under an atmosphere containing 0.05 volume % or more of oxygen, at a temperature of 1273 K or more for 1 minute or more.

The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

A beam having a base material of silicon monocrystal and at least one projection which is integrally formed so as to be supported at least at one end thereof and which has two surfaces having an orientation plane (111), includes a bottom surface in a plane which is common with a plane of the base material; a groove penetrating from the bottom surface to a top of the projection; and a protecting member having a resistance property against a crystal anisotropic etching liquid and covering an inner wall of the groove.

An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.

The moving process of producing amorphous belt includes the following steps: smelting alloy ingot with amorphous iron-base material, chemical analysis, pouring molten steel into pouring basket, making molten steel enter to nozzle ladle, making molten steel flow to cooling roll in high speed rotation for chilling to form thin amorphous belt, and product inspection. The amorphous belt has no crystal, excellent magnetic, electric, chemical and mechanical performance, short production process, low production cost and other advantages.

It is an anisotropism magnetic resistance permalloy film process method, which comprises the following steps: to adopt magnetic control splash method and to select different contents Ni#-[x]Fe#-[1-x] alloy target, wherein x is between 78 to 85; to go to the coating chamber with 99.99 úÑ argon gas for 0.5 to 1 hour before splash; to sustain the gas pressure as 0.1 to 0.5 Pa; to control the thin film impurity content less than 0.1 percent; to process the Ni#-[81]Fe#-[19] thin film with accurate content.

A silicon processing method includes: forming a mask pattern on a principal plane of a single-crystal silicon substrate; and applying crystal anisotropic etching to the principal surface to form a structure including a (111) surface and a crystal surface equivalent thereto and having width W1 and length L1. The principal plane includes a (100) surface and a crystal surface equivalent thereto or a (110) surface and a crystal surface equivalent thereto. A determining section for determining the width W1 of the structure is formed in the mask pattern. The width of the determining section for the width W1 of the mask pattern is width W2. The width of the mask pattern other than the determining section is larger than the width W2 over a length direction of the mask pattern.

The invention belongs to the field of magnetic materials, and particularly to an anisotropic high-frequency microwave magnetic material and a preparation method thereof. The chemical formula of the magnetic material is RxFe100-x-yBy (at%), wherein 11.76<x<=15, 5.88<=y<=7.0, and R is selected from Sm, Er and Tm. The magnetic material has magnetic crystal anisotropy, wherein an easily magnetized surface is vertical with a C axis. The magnetic material is prepared through processes of melting, preparing to a belt, rough crushing, hot pressing, heat deforming and crushing. The anisotropic high-frequency microwave magnetic material which is made of one compound of a metal selected from rare earth intermetallics according to the invention realizes superposing of a magnetic crystal anisotropic field and a shape anisotropic field, so that the material has better high-frequency characteristic.

The invention discloses a method for preparing a monoclinic phase vanadium dioxide nanowire. The method comprises the following steps: mixing a vanadium source, stearic acid and water, carrying out a hydrothermal reaction on the obtained mixed solution, sequentially centrifuging, washing and drying the obtained product after the hydrothermal reaction is completed, thereby obtaining the monoclinic phase vanadium dioxide nanowire. By utilizing the dual effects of inducing anisotropic growth of crystals through a reducing agent and a surfactant in the stearic acid, the monoclinic phase vanadium dioxide nanowire with thermal induced phase transition property can be prepared in a one-step process, the preparation process is simple, complicated equipment is not needed, the production cost is low, the reaction conditions are easy to control, and large-scale industrial production is easily realized; and moreover, the monoclinic phase vanadium dioxide nanowire is uniform in distribution and high in crystallinity and can be applied to the fields of smart windows, photoelectric switches, camouflage and stealth, infrared detection devices and the like.

A method of preparing a Cr<3+>-doped CoFe2O4 high-density magnetic-recording material belongs to the technical field of preparation of magnetic-recording materials. In the method, Cr<3+> is doped into metal oxides through a hydrothermal method, so that size of product particles is changed. In a spinel ferrite structure, iron ions are subjected to crystal field to cause quenching of orbital angular momentum, which leads to low magnetic crystal anisotropy and a low coercive force. As a result, by means of the Cr<3+>, of which the orbital angular momentum is not quenched, for doping the CoFe2O4, the CoFe2O4 is improved in magnetic crystal anisotropy. By means of the hydrothermal method, the Cr<3+> is doped with the CoFe2O4, so that two methods of size controlling and element doping are combined, thereby further increasing the coercive force of the magnetic medium. During the process of doping the Cr<3+>, with increase of the doping amount of the Cr<3+>, the product is gradually increased in magnetic crystal anisotropy, and meanwhile, the size of the particles is gradually changed, and when the size is in single-domain critical size range (about 40-100 nm), the product reaches a peak value in the coercive force. The method can further increase the coercive force of the magnetic medium, and is economical and convenient and is easy to popularize.