Method for preparing aeolotropic magneto resistor permalloy thin film

Abstract

It is an anisotropism magnetic resistance permalloy film process method, which comprises the following steps: to adopt magnetic control splash method and to select different contents NixFe[1-x] alloy target, wherein x is between 78 to 85; to go to the coating chamber with 99.99 % argon gas for 0.5 to 1 hour before splash; to sustain the gas pressure as 0.1 to 0.5 Pa; to control the thin film impurity content less than 0.1 percent; to process the Ni81Fe19 thin film with accurate content.

Description

technical field

[0001] The invention relates to a preparation method of a magnetoresistance thin film, in particular to the preparation of an anisotropic magnetoresistance permalloy thin film. Background technique

[0002] Anisotropic Magnetoresistance (AMR) permalloy thin film (Ni 81 Fe 19 ) usually choose Ta as Ni 81 Fe 19 The (111) texture-inducing layer of the film, that is, the seed layer, has a simple structure, is relatively easy to manufacture, is cheap, and has good stability, and has great advantages in volume, quality, and cost. Today, the resistance (Giant Magnetoresistance, GMR) effect and its products are rapidly developed, and devices such as magnetic sensors made of traditional AMR thin films still occupy the mainstream in the market. At present, the international community is constantly tapping the potential of AMR thin films, improving their magnetic field sensitivity, reducing noise, etc., in order to expand their application fields. In order to achie...

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