Method for improving aeolotropism magnetic resistance permalloy film performance

An anisotropic magnetic and permalloy technology, which is applied in the manufacture/processing of electromagnetic devices, metal material coating technology, ion implantation plating, etc., can solve problems such as unfavorable AMR device applications, and achieve low crystal anisotropy , high anisotropic magnetoresistance value, low coercive force effect

Inactive Publication Date: 2009-02-25
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

However, the Δρ/ρ of the AMR film decreases sharply with the decrease of the film thickness. For example, th

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  • Method for improving aeolotropism magnetic resistance permalloy film performance
  • Method for improving aeolotropism magnetic resistance permalloy film performance

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[0012] DETAILED DESCRIPTION: Preparation of anisotropic permalloy Ni in a magnetron sputtering apparatus 81 Fe 19 film. First, the glass substrate is ultrasonically cleaned with organic chemical solvents and deionized water, and then mounted on the sample base of the sputtering chamber. The substrate was cooled with circulating deionized water, a magnetic field of 250 Oe was applied parallel to the direction of the substrate, and the substrate was always rotated at a rate of 18 revolutions / min, and the sputtering deposition rate was 0.17 nm / min. Sputtering chamber background vacuum 4×10 -5 Pa, pass 99.99% purity argon into the coating chamber for 0.5 hours before sputtering, and maintain the pressure at 0.3 Pa. During sputtering, 99.99% pure high-purity argon gas pressure is 0.4Pa, followed by deposition of 6nm thickness Ta / 50.0nm thickness Ni y Fe 100-y . Through the 50.0nmNi y Fe 100-y Chemical analysis found the corresponding Ni when the film composition meets 81Ni:19Fe and the...

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Abstract

The invention relates to a method for improving the performance of the thin permalloy film of an anisotropic magneto resistor, and belongs to the field of the magnetic thin film. The invention is characterized in that (Ni81Fe19)64Cr36 with a certain thickness is adopted as a buffer layer for induce the strong (111) Ni81Fe19 diffraction peak, and at the same time, an Al2O3 nano oxide layer is deposited onto the surface of Ni81Fe19, so as to increase the AMR value of the Ni81Fe19 thin film through the specular scattering function of the nano oxide layer. The Ni81Fe19 thin film with accurate components can be produced by the magnetron sputtering method. The structure of the thin film is (Ni81Fe19)64Cr36(1-13nm)/Ni81Fe19(10-200nm)/Al2O3(1-3nm)/Ta (5-9nm), argon gas with the purity of 99.99 percent is introduced into a film coating chamber for 0.5-1 hours before sputtering, and the content of impurity in the film is controlled within 0.1 percent. While reducing the preparation difficulty for the thin film, the method can also guarantee that the thin film has good all round performances such as high anisotropic magneto resistance value and low coercive force, low crystal anisotropy, large intensity of magnetization and low magnetostriction when the thin film is very thin, so as to meet the requirements of performances of a magnetic sensor and the products.

Description

technical field [0001] The invention belongs to the field of magnetic thin films, and relates to a preparation method of a magnetic resistance thin film, in particular to the preparation of an anisotropic magnetic resistance permalloy thin film. Background technique [0002] Anisotropic Magnetoresistance (AMR) thin film materials can be used as magnetic sensors for measuring magnetic fields. Compared with other magnetic field sensors such as Hall devices and semiconductor magnetoresistors, AMR sensors have high sensitivity, small size, high reliability, good temperature characteristics, high operating frequency, strong resistance to harsh environments, and easy matching with digital circuits, etc. advantage. It can not only be used in the field of information processing, but also has a wide range of applications in automatic control, aerospace, navigation, military and other fields. Even today, many companies and research institutes are still expanding the application fiel...

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Application Information

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IPC IPC(8): H01L43/12C23C14/35C23C14/06C23C14/54
Inventor 李明华于广华韩刚滕蛟
Owner UNIV OF SCI & TECH BEIJING
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