Method for improving thermostability of anisotropic magnetoresistance permalloy film

An anisotropic magnetic and permalloy technology, applied in the application of magnetic film to substrate, metal material coating process, ion implantation plating, etc., can solve the problem of unfavorable industrial production, increase the number of preparation steps, and increase the preparation time and other problems, to achieve the effect of low crystal anisotropy, meeting performance and product requirements, and low coercivity

Inactive Publication Date: 2013-01-09
UNIV OF SCI & TECH BEIJING
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Although this method can block the diffusion between Ta and NiFe layers and ensure the magnetic properties of the permalloy thin film, it needs oxygen to be oxidized, thereby increasing the preparation steps, and the preparation time is greatly increased, reducing the production cost. Its preparation efficiency is unfavorable for industrialized production

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Examples

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Embodiment 1

[0018] Preparation of Anisotropic Permalloy Ni in Magnetron Sputtering Apparatus 81 Fe 19 film. First, the glass substrate is ultrasonically cleaned with organic chemical solvents and deionized water, and then placed on the sample base of the sputtering chamber. The substrate was cooled with circulating deionized water, a magnetic field of 150 Oe was applied parallel to the direction of the substrate, and the substrate was always rotated at a rate of 30 rpm, and the sputtering deposition rate was 0.3 nm / min. The background vacuum of the sputtering chamber was 5×10-5Pa, and 99.99% pure argon gas was passed into the coating chamber for 1 hour before sputtering, and the air pressure was maintained at 0.5 Pa. 10 nm thick Ta and 50.0 nm thick NiyFe100-y were sequentially deposited under the condition of high-purity argon gas with a purity of 99.99% and a pressure of 1.5 Pa during sputtering. Passed to 50.0 nmNi x Fe 100-x Chemical analysis to find out the corresponding Ni when...

Embodiment 2

[0020] Preparation of Anisotropic Permalloy Ni in Magnetron Sputtering Apparatus 81 Fe 19 film. First, the glass substrate is ultrasonically cleaned with organic chemical solvents and deionized water, and then placed on the sample base of the sputtering chamber. The substrate was cooled with circulating deionized water, a magnetic field of 250 Oe was applied parallel to the direction of the substrate, and the substrate was always rotated at a rate of 18 rpm, and the sputtering deposition rate was 0.17 nm / min. Sputtering chamber background vacuum 4×10 -5Pa, 99.99% pure argon gas was passed into the coating chamber for 0.5 hours before sputtering, and the pressure was maintained at 0.5 Pa. 5 nm thickness of Ta and 50.0 nm thickness of Ni were sequentially deposited under the condition of high-purity argon gas with a purity of 99.99% during sputtering at a pressure of 0.4 Pa. y Fe 100-y . Passed to 50.0 nmNi x Fe 100-x Chemical analysis to find out the corresponding Ni wh...

Embodiment 3

[0022] Preparation of Anisotropic Permalloy Ni in Magnetron Sputtering Apparatus 81 Fe 19 film. First, the glass substrate is ultrasonically cleaned with organic chemical solvents and deionized water, and then placed on the sample base of the sputtering chamber. The substrate was cooled with circulating deionized water, a magnetic field of 300 Oe was applied parallel to the direction of the substrate, and the substrate was always rotated at a rate of 8 revolutions / minute, and the sputtering deposition rate was 0.33 nm / minute. Sputtering chamber background vacuum 9×10 -5 Pa, 99.99% pure argon gas was passed into the coating chamber for 1 hour before sputtering, and the pressure was maintained at 0.5 Pa. 5 nm thickness of Ta and 50.0 nm thickness of Ni were sequentially deposited under the condition of high-purity argon gas with a purity of 99.99% during sputtering at a pressure of 2.7 Pa y Fe 100-y . Passed to 50.0 nmNi x Fe 100-x Chemical analysis to find out the corre...

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Abstract

The invention relates to a method for improving thermostability of an anisotropic magnetoresistance permalloy film. The method adopts a magnetron sputtering process, where the vacuum degree of a sputtering chamber background is 1*10-5 to 9*10-5Pa; argon gas with purity of 99.99% is introduced before sputtering; the argon gas pressure in sputtering is 0.4-2.7Pa; a 150-300Oe magnetic field is applied in the direction parallel to a substrate; the substrate rotates at the speed of 8-30 turns per minutes all the time; a buffer layer Ta, a CoFeB layer, a magnetic layer NiFe, a CoFeB layer and a protective layer Ta are successively deposited on a glass or silicon substrate which is washed clean; and the thickness of the CoFeB layer is 1.0-20.0nm. The film material prepared by the method provided by the invention has the advantage that when the film is very thin, the film material has the combination properties of high anisotropic magnetoresistance value and weak coercive force, low crystal anisotropy, good thermostability and the like so as to meet requirements of performances and products of magnetic sensors.

Description

technical field [0001] The invention belongs to the field of functional material thin films, in particular to the preparation of anisotropic magnetoresistance permalloy thin films and the improvement of thermal stability. Background technique [0002] Anisotropic Magnetoresistance (AMR) thin film materials can be used as magnetic sensors for measuring magnetic fields. Compared with other magnetic field sensors such as Hall devices and semiconductor magnetoresistors, AMR sensors have high sensitivity, small size and high reliability. , good temperature characteristics, high operating frequency, strong ability to withstand harsh environments, and easy to match with digital circuits. It can not only be used in the field of information processing, but also has a wide range of applications in automatic control, aerospace, navigation, military and other fields. Even today, many companies and research institutes are still expanding the application fields of AMR devices. It is par...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F41/18C23C14/35C23C14/16C23C14/18C23C14/20C23C14/56
Inventor 李明华于广华董跃刚冯春
Owner UNIV OF SCI & TECH BEIJING
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