Improved type cross-coupling sensitive amplifier

Abstract

The invention discloses an improved type cross-coupling sensitive amplifier. The improved type cross-coupling sensitive amplifier comprises a voltage pre-charging balance circuit, a PMOS (P-channel Metal Oxide Semiconductor) cross-coupling amplifying circuit, an NMOS (N-channel Metal Oxide Semiconductor) cross-coupling amplifying circuit and an output circuit, wherein the voltage pre-charging balance circuit is connected with the PMOS cross-coupling amplifying circuit and the NMOS cross-coupling amplifying circuit; and the NMOS cross-coupling amplifying circuit is connected with the PMOS cross-coupling amplifying circuit and the output circuit. The voltage pre-charging balance circuit is used for pre-charging and balancing signals of an output port of the amplifier and cutting off an output path of the amplifier; the PMOS cross-coupling amplifying circuit is used for acquiring and quickly amplifying a voltage difference on a bit line; the NMOS cross-coupling amplifying circuit is used for secondarily amplifying the voltage difference on the bit line; and the output circuit is used for converting differential signals output by the amplifying circuit into single-end signals and simultaneously improving the rear-stage driving capability.

Description

technical field [0001] The invention relates to storage circuit technology, in particular to a sensitive amplifier. Background technique [0002] The sense amplifier is an important part of the Static Random Access Memory (SRAM). Since the time consumed for reading data in the SRAM memory is generally longer than the time consumed for writing data, the speed of the SRAM memory is mainly determined by the time for reading data. In the process of reading data in SRAM memory, because many memory cells are connected on the bit line, there is a large capacitance on the bit line, so the speed of the bit line will slow down during the charging and discharging process, which affects the data reading. out speed. The sense amplifier can amplify the tiny swing on the bit line to the level of digital signal, which not only speeds up the reading speed of SRAM memory, but also reduces the voltage swing on the bit line, and eliminates most of the power related to charging and discharging...

AI Technical Summary

Problems solved by technology

Although the op amp type sensitive amplifier has high gain, it is slow, takes up a large area, and consumes a lot of power

Latch-type sense amplifiers generally use differential latch-type sense amplifiers in order to separate the input and output ports. Although the speed is fast, the structure is complex and the dynamic power consumption is large.

The structure of the cross-coupled sense amplifier is relatively simple, the speed is fast, but the sensitivity and reliability are low

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