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A kind of igbt overvoltage protection circuit and a kind of igbt overvoltage protection method

A technology of overvoltage protection circuit and drive control circuit, which is applied in the field of IGBT overvoltage protection and IGBT overvoltage protection circuit, can solve problems such as IGBT breakdown failure, achieve small current demand, suppress collector voltage rise, and protect IGBT Effect

Active Publication Date: 2018-02-16
深圳青铜剑技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the IGBT itself is a voltage-sensitive device, once the voltage exceeds the withstand voltage of the chip, the IGBT will break down and fail.

Method used

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  • A kind of igbt overvoltage protection circuit and a kind of igbt overvoltage protection method
  • A kind of igbt overvoltage protection circuit and a kind of igbt overvoltage protection method
  • A kind of igbt overvoltage protection circuit and a kind of igbt overvoltage protection method

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Embodiment Construction

[0026] The present invention will be further described below with reference to the accompanying drawings and in combination with preferred embodiments.

[0027] Such as figure 1 As shown, the IBGT overvoltage protection circuit of the preferred embodiment of the present invention includes an IGBT, a driving power supply VISO, a collector overvoltage protection circuit 1, a gate overvoltage protection circuit 2 and a drive control circuit 3; wherein the collector overvoltage protection circuit 1 It is used to monitor the voltage of the collector of the IGBT. Once it is detected that the voltage of the collector exceeds a predetermined value, the collector overvoltage protection circuit 1 will transmit the overvoltage signal to the drive control circuit 3, so that the drive control circuit 3 stops the operation of the IGBT. In the turn-off process, the current will be transmitted to the gate of the IGBT at the same time, so that the potential of the gate of the IGBT will rise, t...

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Abstract

The invention discloses an IGBT overvoltage protection circuit and an IGBT overvoltage protection method, wherein the IGBT overvoltage protection circuit includes an IGBT, a drive power supply, a collector overvoltage protection circuit and a drive control circuit, wherein the drive power supply and the gate of the IGBT The collector overvoltage protection circuit is used to monitor the voltage of the collector of the IGBT. When the voltage of the collector of the IGBT exceeds a predetermined value, the collector overvoltage protection circuit transmits the overvoltage signal to the drive control circuit and transmits the current The gate potential of the IGBT is raised to suppress the rise of the collector voltage of the IGBT; the drive control circuit stops turning off the IGBT when receiving the overvoltage signal. Since the IGBT overvoltage protection circuit provided by the present invention generates overvoltage protection, the drive control circuit is also used to control the shutdown of the IGBT, so that the current demand for IGBT gate charging is small, and the response time of the overvoltage protection is greatly shortened. More timely protection of IGBT.

Description

technical field [0001] The invention relates to the technical field of IGBTs, in particular to an IGBT overvoltage protection circuit and an IGBT overvoltage protection method. Background technique [0002] IGBTs are widely used in new power electronics conversion fields. Popular industries such as photovoltaics, wind power generation, frequency conversion, and electric vehicles can see IGBTs playing a very important role in them. During the working process, the IGBT is constantly switched on and off, and the failure of the IGBT is mainly caused by two reasons: over-current and over-voltage; the over-current of the IGBT will cause the internal temperature of the IGBT chip to rise. When the temperature exceeds the internal junction temperature of the chip If the tolerance range is not enough, the PN junction will break down and cause the IGBT to fail. In current actual use, since there are over-current and short-circuit protection circuits for IGBT devices, under normal circ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02H7/20
Inventor 黄辉李燕飞汪之涵
Owner 深圳青铜剑技术有限公司
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