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Silicon-based integrated differential electro-optic modulator and its preparation method

An electro-optical modulator, silicon-based technology, used in instruments, optics, nonlinear optics, etc., can solve the problem of inability to reduce the driving voltage, and achieve the effect of reducing the driving signal and reducing the AC power consumption.

Active Publication Date: 2018-10-09
宏芯科技(泉州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although it realizes the function of differential modulation, the structure of their differential modulation is a series type, and the driving voltage is added to the two modulation arms by half of the input voltage, so the effective value is still the original input voltage, and the driving voltage cannot be reduced.

Method used

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  • Silicon-based integrated differential electro-optic modulator and its preparation method
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  • Silicon-based integrated differential electro-optic modulator and its preparation method

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Embodiment Construction

[0013] The present invention is further described in detail by means of preferred embodiments in conjunction with the accompanying drawings, so that the above-mentioned purpose, scheme and advantages of the present invention can become clearer, wherein:

[0014] figure 1 is a schematic top view of the integrated silicon-based differential modulator. The optical structure of the device adopts the Mach-Zehnder interferometer structure, and the electrical structure adopts the form of traveling wave electrodes. The top metal of the traveling wave electrode adopts the form of GSG, and a capacitive structure is formed between the top metal and the bottom metal. The underlying metal of the traveling-wave electrode is connected to the PN junction, and a termination resistor is integrated at the other end of the traveling-wave electrode. The AC signal loaded on the input end of the top metal of the traveling wave electrode is coupled to the PN junction for modulation through the capa...

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Abstract

The invention discloses a silicon-based integrated differential electrooptical modulator and a preparation method for the same. An optical basic structure of the modulator is a Mach-Zehnder interferometer; and the modulator is manufactured via silicon-based micro-nano waveguide. An electrode structure is a capacitance coupling type coplanar waveguide structure in a form of ground pole-signal pole-ground pole; two phase shift arms of the Mach-Zehnder interferometer are phase-modularized via a PN junction prepared inside and respectively placed in two gaps between the ground poles and the signal pole; and the capacitance coupling coplanar waveguide electrode structure can couple a high speed signal to a PN junction of the phase shift arms for modularization and can also prevent short circuit of a DC bias circuit by two ground poles of an input electrode. Component manufacturing cost is reduced by a present mature CMOS technology, so integration degree is improved and the silicon-based integrated differential electrooptical modulator is especially suitable for application in fields of optical interconnection requiring high integration degree, high performance and low power consumption.

Description

technical field [0001] The invention belongs to the technical field of optical interconnection and optical communication, and in particular relates to a silicon-based differential electro-optical modulator for optical interconnection and a preparation method thereof. Background technique [0002] The application of copper interconnect technology based on Damascus technology in chips is facing various problems brought about by the reduction of chip feature size, such as bandwidth, delay, power consumption, etc. On-chip optical interconnection is considered as the core technology to solve this problem. Due to the application background of on-chip optical interconnection, many requirements are put forward for electro-optical modulators used for on-chip optical interconnection, such as small size, high speed, low power consumption, high reliability, and thermal insensitivity. There are also the above requirements for the optical interconnection between chips and between PCB boa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/015
CPCG02F1/015G02F1/0154
Inventor 丁建峰张磊杨林
Owner 宏芯科技(泉州)有限公司
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