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Optimization method of magnetoresistive static characteristics based on sensing direction

A technology of static characteristics and optimization methods, applied in the direction of measuring magnetic variables, measuring devices, instruments, etc., can solve problems such as the bias of difficult axes, and achieve the effect of large linear area and extended linear area

Active Publication Date: 2019-08-02
TSINGHUA UNIV +1
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Problems solved by technology

At the same time, due to the limitations of the manufacturing process, there is also a bias in the difficult axis

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  • Optimization method of magnetoresistive static characteristics based on sensing direction
  • Optimization method of magnetoresistive static characteristics based on sensing direction
  • Optimization method of magnetoresistive static characteristics based on sensing direction

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Embodiment Construction

[0024] The present invention will be further described below in conjunction with the accompanying drawings.

[0025] Such as Figure 1-3 As shown, a method for optimizing the static characteristics of magnetoresistance based on the sensing direction, specifically includes the following steps:

[0026] Step 1. Set the easy-axis bias field and the hard-axis bias field to constant values, set the value of the sensing direction, and obtain the relationship between the reluctance change rate and the normalized magnetic field on the two-dimensional coordinates according to the output function of the sensor Sensing curve;

[0027] Step 2. Select the maximum value h of a specific magnetic field measurement range FM , pass the sensing curve through the objective function optimization, where f(h F ) is the output function of the bridge chip, h F is the external magnetic field, h FM is the maximum value of the magnetic field measurement range, k and b are the sensitivity and bias ...

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Abstract

The invention relates to the technical field of static characteristic optimization, and discloses a method for optimizing a reluctance static characteristic based on sensing direction. The method comprises the following steps: 1, setting an easy-axis bias field and a hard-axis bias field as constant values, and setting the value of the sensing direction to obtain a sensing curve; 2, selecting the maximum value hFM of a specific magnetic field measurement range, subjecting the sensing curve to optimization of an objective function, which is described in the specification, to obtain a sensitivity k, a bias b and an absolute error Err; 3, selecting the maximum values hFM of different magnetic field measurement ranges and repeating the step 2; 4, selecting the values of different sensing directions, repeating steps 1 to 3, and obtaining N relation curves between the absolute error Err and the magnetic field measurement ranges in the same two-dimensional coordinates; 5, obtaining a corresponding value of the sensing direction that makes a minimum absolute value under the specific magnetic field measurement range, the specific easy-axis bias field and the hard-axis bias field according to the two-dimensional coordinates. By adjusting the sensing direction, a larger linear area can be obtained.

Description

technical field [0001] The invention relates to the technical field of static optimization features, in particular to a method for optimizing static characteristics of magnetoresistance based on sensing directions. Background technique [0002] During the development of tunneling magnetoresistive chips, the impact of measurement accuracy on the chip is very important. The static linear characteristic is one of the important characteristics of the tunneling magnetoresistive chip in the linear measurement. The nonlinear error can be reduced by adjusting the sensing direction, so as to improve the measurement accuracy. [0003] During chip fabrication, in order to improve the linearity of the chip, a bias is usually applied in the direction of the easy axis. At the same time, due to the limitations of the manufacturing process, the difficult axis also has a bias. According to the single-domain model, the tunneling magnetoresistance is reversible and continuous in the directio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R33/09
CPCG01R33/098
Inventor 欧阳勇胡军何金良王善祥赵根王中旭曾嵘庄池杰张波余占清
Owner TSINGHUA UNIV
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