Optimization method of magnetoresistive static characteristics based on easy axis direction of internal bias field

Abstract

The invention relates to the technical field of static characteristic optimization and discloses a magnetic resistance static characteristic optimizing method based on an easy axis direction of an internal bias field. The method specifically includes steps of 1, setting a hard axis bias field as a constant value and setting a value of the easy axis bias field and obtaining a sensing curve; 2, selecting the maximal value hFM of a specific magnetic field measurement range and optimizing the sensing curve through a target function as shown in the description, and obtaining a flexibility k, a bias b and an absolute error Err; 3, selecting the maximal value hFM of different magnetic field measurement ranges and repeating the step 2; 4, selecting values of different easy axis bias fields and repeating steps 1 to 3, and obtaining a relation curve between N absolute error Errs in one two-dimensional coordinate and the magnetic field measurement ranges; 5, obtaining an easy axis bias field relevant value making the absolute value to be the minimum in the specific magnetic field measurement range and the specific hard axis bias field according to the two-dimensional coordinate. Through adjusting the easy axis bias field, a larger linear area is obtained.

Description

technical field [0001] The invention relates to the technical field of static characteristic optimization, in particular to a method for optimizing the static characteristic of reluctance based on the easy axis direction of an internal bias field. Background technique [0002] During the development of tunneling magnetoresistive chips, the impact of measurement accuracy on the chip is very important. The static linear characteristic is one of the important characteristics of the tunneling magnetoresistive chip in the linear measurement, so it is necessary to reduce the nonlinear error by modulating the internal bias field to improve the measurement accuracy. [0003] Due to the limitations of the manufacturing process, the magnetostatic charge and Neel coupling of the ferromagnetic layer inside the tunneling magnetoresistance generate a large interlayer coupling energy in the direction of the hard axis, and in some cases even cause the absolute value of the hard axis bias fi...

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Problems solved by technology

[0003] Due to the limitations of the manufacturing process, the magnetostatic charge and Neel coupling of the ferromagnetic layer inside the tunneling magnetoresistance generate a large interlayer coupling energy in the direction of the hard axis, and in some cases even cause the absolute value of the hard axis bias field to be greater than 1. The bridge chip has no ideal linear range

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