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A Minimalist Simulation Model of Floating Ground Load Control Memristor Circuit

A technology of memristor and floating ground, which is applied in the field of simulation model of floating load control memristor circuit, which can solve the problems of non-two-port model and complex structure of components, achieve no grounding restriction, reduce complexity and number of components , the effect of flexible range of changes

Active Publication Date: 2022-04-26
CHENGDU NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a very simple simulation model of the circuit of the floating load control memory sensor, which solves the problem that some of the existing load control memory sensor circuit simulation models need one end to be grounded, some are not two-port models, and some have The two-port voltage cannot exceed the power supply voltage of the active devices in the model, and some components need complex structures

Method used

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  • A Minimalist Simulation Model of Floating Ground Load Control Memristor Circuit
  • A Minimalist Simulation Model of Floating Ground Load Control Memristor Circuit
  • A Minimalist Simulation Model of Floating Ground Load Control Memristor Circuit

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Embodiment Construction

[0017] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0018] Such as figure 1 As shown, a minimalist simulation model of the floating load-controlled memory inductor circuit, including port a, port b, voltage-controlled inductor U L , inductor L, current-controlled voltage source I U and voltage integrator A, voltage controlled inductor U L Including the voltage control terminal u c and controlled inductance L u , voltage controlled inductor U L Internally controlled inductance L u The inductance is affected by the voltage control terminal u c controlled by the voltage value, the current controlled voltage source I U Including the current control terminal i and the output terminal u of the controlled voltage source i , a current-controlled voltage source I U I...

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Abstract

The invention discloses a minimalist circuit simulation model of a floating load control memory inductor, which includes port a, port b, and a voltage-controlled inductor U L , inductor L, current-controlled voltage source I U and voltage integrator A, voltage controlled inductor U L Including the voltage control terminal u c and controlled inductance L u , controlled inductance L u The inductance is affected by the voltage control terminal u c controlled by the voltage value, the current controlled voltage source I U Including the current control terminal i and the output terminal u of the controlled voltage source i , the controlled voltage source output u i The voltage value of is controlled by the current value of the current control terminal i, and the voltage integrator A includes a voltage input terminal u i and voltage output for u c . The electrical characteristics of ports a and b of the simulation model of the floating load-controlling sensor circuit are equivalent to the load-controlling sensor M L The characteristics of the A and B ports only need to use the existing 4 components in the simulation software, which is a two-port model, which further reduces the complexity and the number of components of the existing load control memory sensor circuit simulation model, and has the ability to change the memory value Advantages of flexible range, no grounding restrictions, wide operating voltage range and easy understanding.

Description

technical field [0001] The patent of the present invention relates to the field of new circuit element model construction, in particular to a minimalist circuit simulation model of a floating load control memory sensor. Background technique [0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley, based on the completeness of circuit theory, predicted a passive basic circuit element that characterizes the relationship between charge and magnetic flux, and named it a memristor. In 2008, Hewlett-Packard Labs announced the physical realization of memristors, which aroused widespread concern in academia and industry, and set off an upsurge of people's research on memristors. Memristors are recognized as the fourth fundamental circuit element. In 2009, new concepts of memcapacitor and meminductor were also proposed. Like memristors and memcapacitors, the characteristic curves of memristors are also pinch hysteresis loops. The pinch hysteresis loop. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/367
CPCG06F30/367
Inventor 余波
Owner CHENGDU NORMAL UNIV
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