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CVD graphene pollution-free transfer process to obtain graphene oxide and graphene composite gas-sensitive film sensor and method

A graphene composite, thin film sensor technology, applied in the field of sensing, to achieve the effects of stable performance, protection of the complete structure, and simplification of transfer steps

Active Publication Date: 2022-05-20
XI AN JIAOTONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems existing in the prior art, the object of the present invention is to propose a pollution-free transfer process of CVD graphene to obtain a gas-sensitive film sensor and a method for graphene oxide and graphene composite structure, and the present invention can overcome the graphene transfer process The problem of organic residual pollution and cracks and wrinkles introduced in the process, and the gas-sensitive film sensor with composite structure of graphene oxide and graphene prepared at the same time can make up for the deficiency of graphene, and its gas-sensing properties have been greatly improved.

Method used

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  • CVD graphene pollution-free transfer process to obtain graphene oxide and graphene composite gas-sensitive film sensor and method
  • CVD graphene pollution-free transfer process to obtain graphene oxide and graphene composite gas-sensitive film sensor and method
  • CVD graphene pollution-free transfer process to obtain graphene oxide and graphene composite gas-sensitive film sensor and method

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preparation example Construction

[0039] 1) Preparation of graphene oxide dispersion

[0040] Take 5-50 mg of graphene oxide, put it into 40 ml of deionized water and shake it for 10-60 minutes, and then sonicate for 4-24 hours to obtain a uniformly dispersed graphene oxide dispersion.

[0041] 2) Transfer of graphene

[0042] 2.1) Spin-coated graphene oxide

[0043]The CVD graphene with metal substrate is placed on the homogenizer, get step 1) prepared graphene oxide dispersion liquid, drop on the graphene surface of CVD graphene, then let the CVD graphene with metal substrate with 100 -Rotate at a speed of 1000 rpm for 30-90 seconds. After completion, structure A is obtained. Remove structure A from the homogenizer, place it on a heating table, and bake it at 40-80°C for 1-30 minutes to remove Spin-coated graphene oxide and moisture in graphene make graphene oxide and graphene form a composite structure, and anneal the composite structure of graphene oxide and graphene, and then remove structure A. Using ...

Embodiment 1

[0052] The pollution-free transfer process of CVD graphene of the present embodiment obtains the method for the gas-sensitive film sensor of graphene oxide and graphene composite structure, comprises the following steps:

[0053] 1) Preparation of graphene oxide dispersion

[0054] Take 24 mg of graphene oxide, put it into 40 ml of deionized water and shake it for 20 minutes, and then sonicate for 6 hours to obtain a uniformly dispersed graphene oxide dispersion.

[0055] 2) Transfer of graphene

[0056] 2.1) Spin-coated graphene oxide

[0057] The CVD graphene with copper foil substrate is placed on the glue homogenizer, 0.2mL of graphene oxide dispersion liquid prepared in step 1) is dropped on the graphene surface of CVD graphene, and then the CVD graphene with copper foil substrate is allowed to The graphene was rotated at a speed of 500 rpm for 45 seconds. After the completion, the structure A was obtained. The structure A was removed from the homogenizer, placed on a h...

Embodiment 2

[0074] The pollution-free transfer process of CVD graphene of the present embodiment obtains the method for the gas sensitive film sensor of graphene oxide and graphene composite structure, comprises the following steps:

[0075] 1) Preparation of graphene oxide dispersion

[0076] Take 5 mg of graphene oxide, put it into 40 ml of deionized water and shake it for 10 minutes, and then sonicate for 4 hours to obtain a uniformly dispersed graphene oxide dispersion.

[0077] 2) Transfer of graphene

[0078] 2.1) Spin-coated graphene oxide

[0079] The CVD graphene with nickel substrate is placed on the homogenizer, get step 1) prepared graphene oxide dispersion 0.2mL, drop on the graphene surface of CVD graphene, then let the CVD graphene with nickel substrate Rotate at a speed of 100 rpm for 30 seconds. After completion, structure A is obtained. Remove structure A from the homogenizer, place it on a heating table, bake at 80°C for 1 minute, and then remove structure A. Using g...

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Abstract

The invention discloses a pollution-free transfer process of CVD graphene to obtain a gas-sensitive film sensor and a method of a composite structure of graphene oxide and graphene. The process is as follows: first, spin-coat graphite oxide on the graphene surface of CVD graphene with a metal substrate ene dispersion to obtain structure A; then bake structure A at 40-80°C for 1-30 minutes; then remove the metal substrate of structure A to obtain a composite film of graphene oxide and graphene composite structure; The film is rinsed; finally, the rinsed composite film is transferred to the electrode structure, and then dried and baked to obtain a gas-sensitive film sensor with a composite structure of graphene oxide and graphene. The invention can overcome the problems of organic residual pollution and cracks and wrinkles introduced in the transfer process of graphene, and at the same time, the gas-sensitive film with composite structure of graphene oxide and graphene can well make up for the deficiency of graphene, making its gas Sensitivity has been greatly improved.

Description

technical field [0001] The invention belongs to the field of sensing technology, and relates to the transfer of graphene and the preparation of a nanometer gas-sensitive film sensor, in particular to a gas-sensitive film sensor with a composite structure of graphene oxide and graphene obtained by a CVD graphene pollution-free transfer process and methods. Background technique [0002] Graphene has attracted worldwide attention because of its excellent electrical and thermal properties and unique physical structure. At present, there are many methods for preparing graphene, mainly including: mechanical exfoliation method, SiC epitaxial growth method, redox method and chemical vapor deposition (CVD). Among them, the CVD method is widely used in the preparation of graphene because of its simple implementation and the ability to prepare large-area, high-quality single-layer graphene. [0003] Although CVD growth of graphene is simple and easy to implement, the graphene transfe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
CPCG01N27/125Y02A50/20
Inventor 李昕王常刘卫华赵丹王旭明贾唐浩
Owner XI AN JIAOTONG UNIV
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