Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

a gas sensor

A gas sensor and sensor technology, applied in the field of sensors, can solve the problems of low accuracy and difficulty in monitoring subtle gas concentration changes, and achieve the effect of improving the accuracy of output data and solving easy jumps.

Active Publication Date: 2021-08-20
安徽云汉智能科技有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the problem that the existing gas sensor is difficult to monitor subtle gas concentration changes and the accuracy is not high, the present invention provides a gas sensor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A gas sensor includes a semiconductor sensor and a microcontroller module, the semiconductor sensor is connected to the microcontroller module, and the microcontroller module has a communication interface circuit; as figure 1 As shown, the microcontroller module processes data as follows:

[0038] S1. Read the voltage signal detected by the semiconductor sensor at a certain sampling frequency, and determine the resistance signal through Ohm's law; the gas-sensing characteristic of the semiconductor gas sensor is that the semiconductor compound is in contact with the gas (oxidizing or reducing) at a certain temperature. The phenomenon that the resistance value changes due to a reaction, for example, there are many active centers on the surface of the surface-controlled metal oxide semiconductor gas-sensitive material, oxygen molecules in the air are adsorbed on the surface of the metal oxide semiconductor, and electrons are obtained from the surface to form a chemical Ad...

Embodiment 2

[0054] The scheme of embodiment 2 is basically the same as that of embodiment 1, the only difference is that in step S2, when the gas concentration signal is relatively large, a calculation formula or gas concentration signal obtained by dividing the gas concentration signal by a large integer is established The reciprocal of , the tiny value is integrated with time to obtain the time integration parameters of the gas concentration signal in each time period.

[0055] In order to simplify the calculation formula, when the value of the gas concentration signal is greater than 1, its reciprocal can be integrated with time to obtain the time integration parameters of the gas concentration signal in each time period.

Embodiment 3

[0057] The scheme of this embodiment and embodiment 1 is basically the same, the difference is:

[0058] The parameters of the steady-state multi-parameter group also include the relevant parameters of each steady-state neutron mutation. One or more of gas-like concentration signal parameters, core gas concentration signal time integral, and generation sequence number; the positive and negative nature of the mutation refers to a positive mutation when the value of the gas concentration signal increases, and a negative mutation when the value of the gas concentration signal decreases.

[0059] The duration of the migration transition process from the previous steady-state migration transition to the next steady-state transition is the duration of the migration transition, the start time of the migration transition is the starting time of the migration transition, and within the time period of the migration transition The integral of the gas concentration signal with respect to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a gas sensor, which belongs to the technical field of sensors. It includes a semiconductor sensor and a microcontroller. The microcontroller processes data according to the following steps: reading the voltage signal detected by the semiconductor sensor module; converting the voltage signal into a resistance signal and then into a gas concentration signal parameter; Integrate with time to obtain gas concentration signal integration parameters in each time period; obtain core gas concentration signal integration parameters and visual gas concentration signal integration parameters; establish multi-parameters including core gas concentration signal integration parameters and visual gas concentration signal integration parameters Group parameters; multi-parameter group parameters are used as process parameters to judge the monitoring status as a whole, and feedback the results. The present invention embodies various features from different angles by including multiple parameters or combinations, and makes overall judgment on the monitoring situation through the multi-parameter group parameters, which greatly improves the sensor acquisition accuracy and the monitoring results are more accurate.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a gas sensor. Background technique [0002] The detection of gas concentration depends on the gas detection transmitter, and the sensor is its core part. According to the different detection principles, it is mainly divided into metal oxide semiconductor sensors, catalytic combustion sensors, constant potential electrolytic gas sensors, and Galvanic batteries. Oxygen sensor, infrared sensor, PID photoionization sensor, etc. At this stage, conventional sensors are generally a detection device made of sensitive materials, which can sense the measured information and convert the sensed information into electrical signals or other required forms of information output according to certain rules. To meet the requirements of information transmission, processing, storage, display, recording and control. Among all gas sensors, metal oxide semiconductor sensors are widely use...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/04
CPCG01N27/04
Inventor 单立辉
Owner 安徽云汉智能科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products