Data error correction method and device

Abstract

The invention discloses a data error correction method and device, and the method comprises the steps: enabling a programming module to store programming data in a selected address, and enabling the programming data to serve as to-be-corrected data; enabling the coding module to generate an error correction code according to the to-be-corrected data; enabling the error correction enabling module to generate a current error correction enabling bit of the selected address according to the inheritance error correction data, the inheritance error correction code and the inheritance error correction enabling bit corresponding to the selected address; enabling the decoding module to read to-be-corrected data from the selected address, obtain an error correction code from the error correction storage array, and generate an error correction password according to the to-be-corrected data and the error correction code; enabling the error correction module to judge to close an error correction operation or perform the error correction operation and output correction data according to the current error correction enable bit. According to the technical scheme provided by the embodiment of theinvention, by setting the error correction enable bit, the error correction problem of the storage unit in the flash memory is avoided when error checking and correction are carried out.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of non-volatile memory, and in particular, to a data error correction method and device. Background technique [0002] With the development of memory storage technology, the requirements for the yield rate of flash memory are getting higher and higher. It is difficult for the existing flash memory architecture and process level to meet the requirements for the yield rate of flash memory. Therefore, error checking and correction technology is introduced into flash memory, which can Effectively improve the yield rate of flash memory. However, the introduction of error checking and correction technology will also bring another problem. For a set of data stored at a selected address, such as 2 bytes (byte) of data, for the first time, 1 byte (byte) of data Store in the selected address, and perform subsequent error checking and correction, and store another 1 byte (byte) of data in the sel...

AI Technical Summary

Problems solved by technology

However, the introduction of error checking and correction technology will also bring another problem. For a set of data stored at a selected address, such as 2 bytes (byte) of data, for the first time, 1 byte (byte) of data Store in the selected address, and perform subsequent error checking and correction, and store another 1 byte (byte) of data in the selected address for the second time, and perform subsequent error checking and correction, then the selected The data in the memory cell at the selected address in the flash memory may be miscorrected when the second error checking and correction is performed

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