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Terahertz wave impedance tuning air dielectric yagi antenna structure and manufacturing method thereof

An air-dielectric and Yagi antenna technology, applied in the field of microelectronics, can solve problems such as impedance tuning, and achieve the effects of easy integration, low process difficulty, and reduced impedance adjustment difficulty and process complexity

Active Publication Date: 2020-07-28
XIDIAN UNIV
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the embodiment of the present application is to solve the above problems in the prior art, to provide a terahertz wave impedance tuning air dielectric Yagi antenna structure and its manufacturing method, which can While effectively reducing loss and improving quality factor, solve the problems of impedance tuning and process stability to meet the performance and impedance design requirements of terahertz antennas

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  • Terahertz wave impedance tuning air dielectric yagi antenna structure and manufacturing method thereof
  • Terahertz wave impedance tuning air dielectric yagi antenna structure and manufacturing method thereof
  • Terahertz wave impedance tuning air dielectric yagi antenna structure and manufacturing method thereof

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Embodiment Construction

[0042] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0043] In order to facilitate understanding of the embodiments of the present application, the following will describe the embodiments of the present application more comprehensively with reference to related drawings.

[0044] refer to Figure 1-2In the embodiment of the present application, the terahertz wave impedance tuning air dielectric Yagi antenna structure includes a silicon carbide substrate layer 1, and the silicon carbide substrate layer 1 is made of a high-resistance silicon carbide material, and the high-resistance type silicon carbide material has a resistivity greater than 105 ohms. cm silicon carbide material. A switch metal layer 2 with grooves is deposited on the front side of the silicon carbide substrate layer 1, ...

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Abstract

The invention relates to a terahertz wave impedance tuning air dielectric yagi antenna and a manufacturing method thereof. The terahertz wave impedance tuning air dielectric yagi antenna comprises a substrate layer, a director metal layer, a switch metal layer, a signal line metal layer, a front grounding metal layer and a back grounding metal layer, wherein the director metal layer is located onthe front surface of the substrate layer and is connected with the substrate layer through a director metal supporting column; the switch metal layer is located on the front surface of the substrate layer; the signal line metal layer is located on the front surface of the substrate layer and is connected with the substrate layer through a signal line metal supporting column; the front grounding metal layer is located on the front surface of the substrate layer and is connected with the substrate layer through a front surface grounding metal supporting column; and the back grounding metal layeris located on the back surface of the substrate layer. According to the embodiment of the invention, the problems in the aspects of impedance tuning and process stability can be solved while the lossis effectively reduced and the quality factor is improved so as to meet the performance and impedance design requirements of the terahertz antenna.

Description

technical field [0001] The embodiments of the present application belong to the field of microelectronics and design terahertz band antenna technology, and specifically relate to a terahertz wave impedance-tuned air-dielectric Yagi antenna structure and a manufacturing method thereof. Background technique [0002] Due to its outstanding advantages in high-speed communication, atmospheric detection and non-destructive imaging, terahertz systems have attracted a lot of attention from scholars at home and abroad. Terahertz monolithic integrated circuits (TMICs), especially TMICs based on wide bandgap semiconductor materials, are considered to be one of the best solutions for future terahertz communication systems due to their high output power, high integration, and low parasitic crosstalk. In recent years, terahertz active devices have been significantly improved in terms of power and efficiency, which also makes terahertz systems have low loss, low parasitic effects, small si...

Claims

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Application Information

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IPC IPC(8): H01Q1/38H01Q1/50H01Q19/30H01L23/66
CPCH01Q1/38H01Q1/50H01Q19/30H01L23/66H01L2223/6677
Inventor 杨林安刘禹辰马晓华郝跃
Owner XIDIAN UNIV