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A kind of high power vcsel and preparation method thereof for vehicle radar

A vehicle-mounted radar, high-power technology, applied in the structure of the active area, laser components, semiconductor lasers, etc., can solve the problems of unable to meet market requirements, difficult to achieve high power, difficult to control high-order modes, etc., to improve the space burn. Pore ​​phenomenon, reduce internal loss and absorption, increase the effect of population inversion

Active Publication Date: 2021-06-11
南昌凯捷半导体科技有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0014] 1. The power is low, only limited to a few watts, and it is difficult to achieve high power in the same area;
[0015] 2. The gain is relatively low and cannot meet the current market requirements;
[0016] 3. The phenomenon of hole burning in space is serious;
[0017] 4. High-order modes are difficult to control

Method used

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  • A kind of high power vcsel and preparation method thereof for vehicle radar
  • A kind of high power vcsel and preparation method thereof for vehicle radar
  • A kind of high power vcsel and preparation method thereof for vehicle radar

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Embodiment Construction

[0056] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way serves as any limitation of the application, its application or uses. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0057] In the description of this application, it should be understood that the use of words such as "first" and "second" to define parts is only for the convenience of distinguishing corresponding parts. Therefore, it should not be construed as a limitation of the protection scope of this application.

[0058] I...

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Abstract

The present invention provides a high-power VCSEL for vehicle radar and a preparation method thereof. The high-power VCSEL of the present invention comprises a GaAs substrate, a GaAs buffer layer, an N-type DBR layer, five active layers, oxide layer, P-type DBR layer and P-type GaAs layer; the total cavity length of the VCSEL is an integer multiple of 5 wavelengths. The invention uses the tunneling junction to realize the series connection of five active layers, and by designing a specific cavity length, the power per unit area is improved, and higher power is realized; meanwhile, the moving distance of carriers is solved by designing different potential barrier heights. , increase the probability of radiation recombination, increase the number of particles inversion, and increase the output power; through the design of the growth thickness, the gain is increased, the standing wave field is improved, and the output power is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a high-power VCSEL for vehicle-mounted radar and a preparation method thereof. Background technique [0002] Vertical-cavity surface-emitting lasers (VCSELs) have been used in data communications for more than two decades, but there are many emerging application requirements that are driving the volume production and performance improvement of VCSELs. These applications include, but are not limited to, face recognition, gesture recognition, proximity sensing, high-resolution video displays, automotive lidar, infrared lighting, infrared heating, atomic clocks. [0003] At present, single-junction VCSELs are widely used in mobile phones, which can only realize distance tests of tens of meters, and it is difficult to meet long-distance tests and cannot meet the needs of vehicle radar. Therefore, in order to achieve long-distance testing, it is particularly important to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/187H01S5/32H01S5/323H01S5/343H01S5/42
CPCH01S5/187H01S5/3205H01S5/323H01S5/343H01S5/34326H01S5/34333H01S5/426H01S2304/04
Inventor 林晓珊吴春寿宁如光杨祺王苏杰陈振宇潘彬王向武
Owner 南昌凯捷半导体科技有限公司
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