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Electrostatic protection circuit

An electrostatic protection and circuit technology, applied in the direction of emergency protection circuit devices, circuits, circuit devices, etc., to achieve the effect of improving electrostatic protection capabilities

Pending Publication Date: 2021-10-22
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, with the development of advanced manufacturing processes, the breakdown voltage of the oxide layer has become smaller than the junction breakdown voltage, and the original ESD design window no longer exists.

Method used

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  • Electrostatic protection circuit
  • Electrostatic protection circuit
  • Electrostatic protection circuit

Examples

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Embodiment Construction

[0029] Example embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these examples are provided so that this disclosure will be thorough and complete and will fully convey the concept of the exemplary embodiments communicated to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0030] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanying drawings directions for the example described above. It will be appreciated that if the modules of the icon ar...

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Abstract

The embodiment of the invention provides an electrostatic protection circuit, and the circuit is connected with an internal circuit and comprises a first circuit, a first diode connected with the first circuit in parallel, a second circuit and a second diode connected with the second circuit in parallel. The first circuit is connected between the power supply bonding pad and the input end of the internal circuit, and the second circuit is connected between the input end of the internal circuit and the grounding bonding pad; and the first circuit and the second circuit are diode auxiliary trigger thyristor circuits. According to the technical scheme, the electrostatic protection capability of the charging device model of the chip can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an electrostatic protection circuit. Background technique [0002] At present, the semiconductor manufacturing process is getting more and more advanced, the channel length is getting shorter and shorter, the junction depth is getting shallower, the application of silicide, the application of light doping, the oxide layer is getting thinner, ESD (electrostatic The window (window) of discharge (electrostatic discharge) design is getting smaller and smaller, and the challenges faced by ESD protection design are getting bigger and bigger. [0003] In a conventional CDM (Charged Device Model, charging device model) electrostatic protection circuit, the breakdown voltage of the oxide layer of the MOS (Metal Oxide Semiconductor) device in the input buffer is greater than that of the MOS device used for electrostatic protection The junction (junction) breakdown voltage. However...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0255H01L27/0262H01L27/0296H01L27/0266H02H9/046
Inventor 许杞安
Owner CHANGXIN MEMORY TECH INC
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