Rewritable optical data storage medium

A technology of optical data and storage media, which is applied in the direction of optical record carrier, data recording, information storage, etc., and can solve the problem that the crystallization time recording layer is not large enough

Inactive Publication Date: 2007-07-11
KONINKLIJKE PHILIPS ELECTRONICS NV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to existing standards, such crystallization times are far from being large enough to be used as recording layers in stable media

Method used

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  • Rewritable optical data storage medium
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  • Rewritable optical data storage medium

Examples

Experimental program
Comparison scheme
Effect test

example A

[0036] Table 1 Examples A, B, U, T and Z (U, T and Z are not examples of the invention = nati)

[0037] Table 1

example

adulterant 1

(at.%)

adulterant 2

(at.%)

principal component

(at.%)

at 100nm

Mark diameter

Conditional

CET(ns)

at 30°C

Conditional extrapolation

shelf life

comprehensive

the noise

(mV)

A

Ga(17)

-

Sb(83)

25

>10 10 years

5.3

B(nati)

-

In(15)

Sb(85)

5

>30years

7.5

Z(nati)

Ga(10)

In(40)

Sb(50)

25

0.6 years

n.m.

U(nati)

-

In(5)

Sb(73)Te(22)

(Sb / Te=3.3)

27

50

5.3

T(nati)

In(5)

Sb(81)Te(14)

(Sb / Te=5.8)

12

<0.01year

n.m.

[0038] Table 2

[0039]Additional data for Examples A, B are shown in Table 2. T cd and T cw are the crystallization temperatures o...

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Abstract

A rewritable optical data storage medium ( 20 ) for high-speed recording by means of a focused radiation beam ( 10 ) is described. The medium ( 20 ) comprises a substrate ( 1 ) carrying a stack ( 2 ) of layers, which stack ( 2 ) comprises, a first auxiliary layer ( 3 ), a second auxiliary layer ( 5 ), and a recording layer ( 4 ) of a phase-change material mainly comprising an alloy of Sb and at least one of Ga and In. The recording layer ( 4 ) is interposed between the first auxiliary layer ( 3 ) and the second auxiliary layer ( 5 ). If the alloy is of a composition in atomic percentages defined by the formula: GaxInySbz and 70=z=95 and x+y+z=100 the recording layer ( 4 ) has a crystallization speed making it suitable for direct overwrite high speed recording at a velocity of more than 10 m / s and an archival life stability of at least 10 years at 30° C. Further the recording layer ( 4 ) has a relatively low media noise.

Description

technical field [0001] The invention relates to a rewritable optical data storage medium for high-speed recording by means of a focused radiation beam, said medium comprising a substrate carrying a stack of layers comprising a first auxiliary layer, a second auxiliary layer and a corresponding A recording layer of a phase change material mainly including an alloy of Sb and Ga, the recording layer being interposed between the first auxiliary layer and the second auxiliary layer. Background technique [0002] An embodiment of an optical data storage medium of the type mentioned in the opening paragraph is known from European patent EP 0387898B1. [0003] Optical data storage media based on phase change principles have attracted attention due to the combination of direct overwrite (DOW) possibility and high storage density with ease of compatibility with read-only optical data storage systems. Phase change optical recording involves the use of relatively high power focused rad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B7/24B41M5/26G11B7/2403G11B7/243G11B7/253G11B7/2533G11B7/2542G11B7/257
CPCG11B2007/2431G11B2007/25713G11B7/257G11B7/2403G11B2007/24314G11B7/2542G11B7/2533G11B7/243G11B2007/2571
Inventor L·范皮特森M·H·R·兰克霍斯特J·H·J·鲁森
Owner KONINKLIJKE PHILIPS ELECTRONICS NV
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