Cmp conditioner

a conditioner and conditioner technology, applied in the field of cmp conditioner, can solve the problems of binding phase metal, undesirable polishing, poor cutting performance of the polishing pad by such super-abrasive grains, etc., and achieve the effects of reducing cutting performance, and preventing metal dissolution in slurry

Inactive Publication Date: 2008-06-05
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention is a CMP conditioner that prevents metal dissolution in the slurry without causing damage to the abrasive grains or decreasing cutting performance. The conditioner has an abrasive grain layer made of low temperature co-fired ceramics, which holds the abrasive grains securely and prevents chipping or carbonization during sintering. The conditioner body is made of ceramics, and the binding phase fixes the abrasive grains to the conditioning surface. This prevents metal dissolution and ensures reliable polishing of semiconductor wafers.

Problems solved by technology

When highly corrosive strong acid or strong alkaline slurry is used in a CMP apparatus, the binding phase metal is dissolved, it become undesirable to polish semiconductor wafers in such slurry with dissolved metals.
On the other hand, to prevent the surfaces from such carbonation by the heat, if the surfaces of the diamond super-abrasive grains are coated as disclosed in Japanese Patent No. 527448 and Japanese Patent application Publication No. 2005-288685, the cutting performance of the polishing pad by such super-abrasive grains became poor, which results in decrease of the pad polishing rate.

Method used

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Examples

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Embodiment Construction

[0015]FIG. 1 is a sectional view showing the CMP conditioner according to an embodiment of the invention. The CMP conditioner of this example has a disc shaped conditioner body 1. One of the surfaces is a conditioning surface 2, that faces and contacts the CMP conditioner's polishing pad. This conditioning surface 2, has abrasive grains 3 distributed, then fixed with binding phase 4; thus forming adhesive layer 5. The circumferential surface of conditioner body 1, and the opposite side of the conditioning surface 2, are attached to resin chassis 6; the chassis 6 has a contour that fits the dimensions of the conditioner.

[0016]In this embodiment, the abrasive grains 3 are diamond super-abrasive grains that have about the same average diameter, which are arranged approximately in a regular grid on the conditioning surface 2. The abrasive grains 3 protrude from the binding phase 4 surface by pressure adjustment during fabrication.

[0017]The binding phase 4 is made of low temperature co-f...

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Abstract

To provide a CMP conditioner that prevents dissolution of metals in slurry, without the chipping of the abrasive grains and / or decreasing the cutting performance. The CMP apparatus has a polishing pad that faces and contacts conditioning surface of the conditioner body. On this conditioning surface, abrasive grains are distributed and fixed to form abrasive grain layer, thus forming the CMP conditioner. The conditioner body is made of ceramics, the abrasive grains in the abrasive grain layer are held by binding phase made of low temperature co-fired ceramics.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. §119 to Japanese Patent Application No. 2006-321542, filed Nov. 29, 2006. The contents of which are incorporated herein by reference in their entirety.FIELD OF THE INVENTION[0002]The present invention relates to a CMP conditioner for conditioning the polishing pad of a CMP (Chemical Mechanical Polishing) apparatus that polishes semiconductor wafers and the like.DESCRIPTION OF RELATED ART[0003]Various kinds of CMP conditioners in which abrasive grains are fixed by metal plating binding phase of Ni and the like, on a base metal plate, such as stainless steel have been reported. When highly corrosive strong acid or strong alkaline slurry is used in a CMP apparatus, the binding phase metal is dissolved, it become undesirable to polish semiconductor wafers in such slurry with dissolved metals. To avoid this problem, for example, Japanese Patent No. 3527448 and Japanese Patent application P...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): B24B53/02B24B53/12H01L21/304
CPCB24B53/12B24B53/017H01L21/304
InventorRIKITA, NAOKICHIDA, KASUMI
OwnerMITSUBISHI MATERIALS CORP