Slurry for cmp and method of polishing substrate using same

A polishing slurry and substrate technology, applied in the polishing field, can solve the problems of no large particle number analysis, reducing the nitride layer elimination rate, large particle control and other problems

CN100445343CActive Publication Date: 2008-12-24K C TECH +1
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2008-12-24

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Abstract

The invention describes a polishing slurry and a preparation method thereof. Specifically, the present invention relates to a slurry for chemical mechanical polishing (hereinafter referred to as 'CMP'). When this polishing slurry is applied to CMP in STI (Shallow Trench Isolation) The polishing rate of the layer has high selectivity. This selectivity is essential for the production of ultra-highly integrated semiconductor silicon wafers (ultra-highly integrated semiconductor silicon wafers have certain design standards for D-RAMs of 256 megabytes or higher, such as a design standard of 0.13 μm or smaller). important. The invention includes a method and equipment for pretreatment of polishing particles, dispersion equipment and its operation method, dosage and addition method of chemical additives and a transfer sample device. The invention can produce high-performance nano-scale ceria slurry, which is very important for the CMP of ultra-highly integrated semiconductors with a thickness of less than or equal to 0.13 μm, especially the STI process.
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Description

technical field

[0001] The present invention relates to a slurry for polishing, especially chemical mechanical polishing (hereinafter referred to as 'CMP'). More specifically, the present invention relates to a method for preparing a high-performance polishing slurry and a method for polishing a substrate. In the manufacturing process of 256 megabytes or higher D-RAM ultra-highly integrated semiconductor silicon wafer (design standard ≤ 0.13 μm), chemical mechanical polishing is carried out with the slurry of the present invention, and the polishing of the oxide layer and the nitride layer The rate is highly selective and scratches are reduced. Background technique

[0002] CMP is a semiconductor processing technology, that is, the polishing slurry is introduced between the clamped wafer and the polishing pad, and mechanical polishing is performed while the chemical corrosion polishes the processed surface. This method has been successfully developed by IBM Corporation of ...

Examples

Embodiment Construction

[0028] The preparation method of the polishing slurry in the present invention and the analysis of the properties of the polishing slurry will be described in detail below. In addition, the present invention will also illustrate the preparation method of polishing slurry using cerium oxide as polishing particles, and the method of using deionized water and anionic polymer as dispersant. Finally, this paper will also give the experimental results of the CMP process, that is, how the oxide film polishing rate and selectivity depend on the process conditions. The present invention may require further improvement in the future, and its scope of application is not limited to the scope discussed herein.

[0029] [Preparation method of ceria polishing slurry]

[0030] The ceria polishing slurry of the present invention comprises ceria powder, deionized water, anionic polymer dispersant and an additive such as a weak acid or a weak base. The preparation method of the polishing slurr...