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Umbilical cord facilities connection for an ion beam implanter

An ion beam implantation, ion beam technology, applied in semiconductor/solid state device manufacturing, irradiation devices, discharge tubes, etc., can solve problems such as excessive pulling, power failure, heavy slip ring/slip seal components, etc., and achieve stack height. small effect

Inactive Publication Date: 2008-10-01
AXCELIS TECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Slip ring / slide seal assemblies are also heavy and tend to fall apart
In addition, such assemblies often cause electrical failures or arcing and excessive strain on the mechanical drive system that turns the base

Method used

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  • Umbilical cord facilities connection for an ion beam implanter
  • Umbilical cord facilities connection for an ion beam implanter
  • Umbilical cord facilities connection for an ion beam implanter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Referring to the accompanying drawings, the ion beam implanter is in figure 1 are shown collectively at 10. The implanter includes an ion source 12 to generate ions to form an ion beam 14 that traverses a beamline path 16 to an end or implant station 20 . The implant station includes a vacuum or implant chamber 22 defining an interior region 22e in which a workpiece 24 such as a semiconductor chip or panel or substrate is placed for implantation with the ion beam 14 . Control electronics (shown schematically at 26 ) are provided to monitor and control the ion dose received by the workpiece 24 . Operator control electronics 26 inputs are performed by the user control panel 27 . Ion source 12 generates ion beam 14 that strikes workpiece 24 . Ions in ion beam 14 tend to diverge as the beamline traverses a distance along beamline path 16 between ion source 12 and implant chamber 22 . Ion source 12 includes a plasma chamber 28 defining an electrical interior region into...

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PUM

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Abstract

An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a chuck including a rotatable pedestal for supporting the workpiece. The workpiece support structure further includes a first rotatable reel coupled to and rotatable with the pedestal and a flexible, hollow cord carrying facilities such as coolant lines and electrical power conductors coupled to the rotatable reel such that, as the pedestal is rotated in a first direction, a length of the flexible cord that is wrapped around the first reel increases and, as the pedestal is rotated in an opposite direction, a length of the flexible cord that is wrapped around the first reel decreases.

Description

technical field [0001] The present invention relates to a workpiece support structure for an ion beam implanter, and more particularly, to a workpiece support structure for an ion beam implanter comprising a hollow umbilical for introducing coolant and power between the base of an electrostatic chuck within a vacuum implant chamber or the rotatable workpiece support outside of the implant at atmospheric pressure. Background technique [0002] Ion beam implanters are widely used in semiconductor chip doping processing. Ion beam implanters generate ion beams that contain positively charged ions of desired species. The ion beam strikes an exposed surface of a workpiece, such as a semiconductor chip, substrate, or panel, thereby "doping" or implanting the workpiece surface with the desired ions. The pedestal can be tilted to adjust the workpiece implantation angle relative to the workpiece implantation angle at which the ion beam strikes the workpiece. An implantation angle o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01J37/317G21K5/04H01L21/683H01L21/687
CPCH01L21/67109H01J37/3171H01L21/6831H01L21/68792H01J2237/2001H01L21/68764H01L21/67069H01L21/265
Inventor R·米切尔K·瑞安
Owner AXCELIS TECHNOLOGIES