Manufacture by Dimashg process

A manufacturing method and process technology, applied in the field of manufacturing integrated circuits by Damascus process, can solve the problems of cumbersome process, failure, adverse reactions in subsequent processes, etc., and achieve the effect of improving the qualification rate and shortening the etching.

Inactive Publication Date: 2009-09-30
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Full via first method (Full VIA First) This process has no alignment problem, no via failure problem and a large process window, but the problem is mainly concentrated in the via filling step, failed via filling or uneven filling The performance will inevitably lead to adverse reactions in the subsequent process, or even failure, and the conventional filling reagent and subsequent photolithography process use a variety of different types of chemical substances, the process is cumbersome, and the subsequent etching process is complicated

Method used

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  • Manufacture by Dimashg process
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  • Manufacture by Dimashg process

Examples

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Embodiment Construction

[0031] Now in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail:

[0032] Firstly, a through-hole dielectric layer 1 at the bottom layer of damascene is deposited.

[0033] Secondly, if Figure 3A as shown ( Figure 3A For the schematic diagram of coating the first single-layer photosensitive material), the first layer of single-layer photosensitive material 3 is coated on the surface of the through-hole dielectric layer of the damascene bottom layer, and photolithography is performed. The first single-layer photosensitive material is composed of ketones, ethers, alkane organic solvents and photosensitive cross-linking resins, and the molecular weight is between 85,000 and 150,000.

[0034] Secondly, if Figure 3B as shown ( Figure 3B is a schematic diagram of through-hole etching), and through-hole etching and cleaning are performed on the through-hole dielectric layer at the bottom of the damascene. T...

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Abstract

The invention belongs to the technical field of integrated circuit preparation technology, and specifically relates to a method for manufacturing integrated circuits using a Damascus process by combining double-layer photosensitive materials and single-layer photosensitive materials, using the technology of step-by-step manufacturing through holes and metal wire grooves . The damascene process is an emerging metal wiring technology, which has a more prominent problem of via filling. The present invention uses the novel method of firstly completing and filling the through holes, and then relying on the top-layer reagent of the double-layer photosensitive material to self-form an oxide layer after plasma treatment, covering the through holes on the surface, and then depositing and manufacturing metal wire grooves to complete the manufacturing process. It greatly simplifies and shortens the subsequent etching and cleaning processes, and further improves the pass rate.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit technology, and in particular relates to a method for manufacturing integrated circuits by using a Damascus process in which double-layer photosensitive materials and single-layer photosensitive materials are combined with each other. Background technique [0002] With the continuous improvement of integrated circuit manufacturing technology, the volume of semiconductor devices is becoming smaller and smaller, and it is more difficult to connect them. In the past 30 years, the semiconductor industry has used aluminum as the material for connecting devices, but as chips shrink, the industry needs thinner and thinner connections, and the high resistance of aluminum is becoming more and more difficult to meet. need. Moreover, in the case of high-density VLSI, high resistance can easily cause electrons to "jump wires", causing nearby devices to produce false switching states. That is to s...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/768H01L21/3205G03F7/004
Inventor朱骏
OwnerSHANGHAI INTEGRATED CIRCUIT RES & DEV CENT