Memorizer with disabling circuit and method for disabling memorizer

A memory and memory array technology, applied in the field of memory, can solve problems such as test efficiency and process/test cost impact

Active Publication Date: 2012-12-12
ETRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, since the defective chips have already been packaged into integrated circuits (Integrated Circuit, IC) of the memory during the packaging test, even if the defective chips are successfully filtered out by the packaging test, it will still affect the yield, test efficiency and Significant impact on process / test costs

Method used

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  • Memorizer with disabling circuit and method for disabling memorizer
  • Memorizer with disabling circuit and method for disabling memorizer
  • Memorizer with disabling circuit and method for disabling memorizer

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Embodiment Construction

[0025] In view of this, the present invention utilizes a disabling circuit to control the output of a memory. As long as a memory cell of the memory is detected to be defective at any stage of the process, the disabling circuit can make the output terminal of the memory a high impedance (tri-state) state, that is, disable the memory. Therefore, in subsequent testing steps, the memory can be directly identified as defective.

[0026] Please refer to figure 1 . figure 1 It is a schematic diagram illustrating the memory 10 of the present invention. The memory 10 includes a memory array 11 , a disable circuit 12 and an output terminal OUT. The disabling circuit 12 is coupled to the data output terminal IO and the output enable terminal OE of the memory array 11 . The memory array includes a plurality of memory cells, and the stored data is transmitted to the output terminal OUT through the disable circuit 12 . The disabling circuit 12 can control the output terminal OUT of th...

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Abstract

The invention discloses a memorizer with a disabling circuit, which comprises a memorizer array and a disabling circuit. The memorizer array comprises a data output end and an output enabling end. The disabling circuit is coupled to the data output end and the output enabling end. The disabling circuit comprises a fuse and an output end, wherein the disabling circuit determines the logic state ofthe output end according to the logic states of the output enabling end and the data output end when the fuse is not brunt out, and the disabling circuit leads the output end to be under a high-impedance state when the fuse is brunt out. Therefore, an external circuit can not read or write the memorizer array. Meanwhile, the invention further discloses a method for disabling the memorizer.

Description

technical field [0001] The present invention relates to a memory, and more particularly to a memory with a disabling circuit capable of disabling the memory when the memory is defective. Background technique [0002] With the development of integrated circuit technology and the improvement of device density, a wafer for memory applications can simultaneously produce multiple dies containing millions of electronic components. Usually, in the production process of these crystal grains, a wafer process is performed first, and processes such as deposition, photolithography, or etching are performed on some or all chips on the wafer at the same time. After the wafer is fabricated, back-end processes such as dicing and packaging are performed. [0003] Generally speaking, before the finished wafer is packaged, it is necessary to perform various electrical function tests on each die on the wafer to determine whether there are damaged dies and ensure that they are functional when t...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L27/115H01L23/525H10B69/00
Inventor王释兴袁德铭
OwnerETRON TECH INC