Memory system and method of operating the same

A technology for operating storage and memory cells, which is applied in the field of storage systems and can solve problems such as inability to use memory cell blocks.

Inactive Publication Date: 2012-07-04
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Error correction operations cannot be applied to memory cell blocks with a large number of erroneous bits

Method used

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  • Memory system and method of operating the same
  • Memory system and method of operating the same
  • Memory system and method of operating the same

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Embodiment Construction

[0021] Hereinafter, some exemplary embodiments according to the present invention will be described in detail with reference to the accompanying drawings. The drawings are provided to enable those of ordinary skill in the art to understand the scope of embodiments of the present invention.

[0022] image 3 is a diagram illustrating a storage system according to the present invention.

[0023] see image 3 , the memory system includes a memory cell array 110, an operating circuit group (130, 140, 150, 160, 170, and 180) for performing a program operation or a read operation on memory cells of the memory cell array 110, and a controller 120, the The controller 120 is used to control the operation circuit group (130, 140, 150, 160, 170, and 180) so that the program verification operation is sequentially performed in such a manner that memory cells programmed with a higher level are verified later.

[0024] In the case of a NAND flash memory device, the operating circuit group...

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Abstract

A method of operating a memory system includes classifying numbers of total error bits into a plurality of ranges, assigning a plurality of data to the plurality of ranges, respectively, counting a number of detected error bits for a memory cell block, and storing a selected one of the plurality of data in at least one spare cell when the number of the detected error bits is within one of the ranges that corresponds to the selected data.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2010-0139185 filed on Dec. 30, 2010, the entire contents of which are hereby incorporated by reference. technical field [0003] Exemplary embodiments relate to a memory system and an operating method thereof, and more particularly, to a memory system that classifies memory cell blocks according to the number of erroneous bits and an operating method thereof. Background technique [0004] After the semiconductor memory device is manufactured, a test operation for judging whether a memory cell block of the semiconductor memory device belongs to a normal block or an unusable bad block is performed. The test operation can be performed in various ways, one of which is to perform a test program operation or a test erase operation using test data. This method will be described below. [0005] figure 1 is a diagram illustrating a memory cell array. [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/08
CPCG11C16/349G11C29/42G11C29/82G11C29/4401G11C2029/0409G11C2029/0411G11C16/3495
Inventor 朴成勋
Owner SK HYNIX INC
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