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Power module, substrate provided with heat radiator and used for power module and manufacturing method of substrate

A technology for power modules and radiators, which is applied in the manufacture of semiconductor devices, electrical solid state devices, semiconductor/solid state devices, etc., can solve problems such as interface peeling, and achieve the effect of preventing cracks

Active Publication Date: 2012-09-05
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, even when the surface roughness is adjusted to Ra=0.1 μm or less by polishing, interfacial peeling may occur in the same manner.

Method used

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  • Power module, substrate provided with heat radiator and used for power module and manufacturing method of substrate
  • Power module, substrate provided with heat radiator and used for power module and manufacturing method of substrate
  • Power module, substrate provided with heat radiator and used for power module and manufacturing method of substrate

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Experimental program
Comparison scheme
Effect test

Embodiment

[0123] A comparative experiment performed to confirm the effectiveness of the present invention will be described.

[0124] A circuit layer made of 4N aluminum with a thickness of 0.6 mm and a metal layer made of 4N aluminum with a thickness of 0.6 mm were joined to a ceramic substrate made of AlN with a thickness of 0.635 mm to produce a substrate for a power module.

[0125] Here, Si and additive elements are fixed to the bonding surface of the aluminum plate (4N aluminum) serving as the circuit layer and the metal layer to form an anchor layer, and the metal plate and the ceramic substrate are laminated and heated under pressure to join the metal plate and the ceramic substrate.

[0126] Furthermore, various test pieces in which the additive elements to be fixed were changed were produced, and the bonding reliability was evaluated using these test pieces. As an evaluation of bonding reliability, the bonding rate after repeating 2000 cycles of cooling and heating (-45°C to 1...

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PUM

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Abstract

The invention provides a substrate for a power module, the power module with the substrate and a manufacturing method of the substrate for the power module, wherein the substrate has metal plates and a ceramic substrate which are jointed definitely and has high heat circulation reliability. According to the substrate (10) for the power module, the surface of the ceramic substrate (11) is laminated and jointed with aluminum metal plates (12 and 13). The substrate is characterized in that besides Si, one or more than two adding elements selected from Zn, Ge, Ag, Mg, Ca, Ga and Li are solidly dissolved in the metal plates (12 and 13), the sum of the Si concentration near an interface of the ceramic substrate (11) and the concentration of the adding elements is set to be higher than 0.05 percent by mass and lower than 5 percent by mass.

Description

technical field [0001] The present invention relates to a substrate for a power module used in a semiconductor device that controls large current and high voltage, a substrate for a power module with a heat sink, a power module including the substrate for a power module, and a method for manufacturing the substrate for a power module . Background technique [0002] Since the power element used for power supply among semiconductor elements has relatively high heat generation, as the substrate on which the power element is mounted, for example, as shown in Patent Document 1, the following substrate for a power module is used: a substrate made of AlN (aluminum nitride ) on a ceramic substrate composed of an Al (aluminum) metal plate joined by solder. [0003] And, this metal plate is formed as a circuit layer, and a power element (semiconductor element) is mounted on the metal plate via solder. [0004] In addition, it has been proposed to form a metal layer by bonding a meta...

Claims

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Application Information

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IPC IPC(8): H01L23/14H01L23/485H01L23/36H01L21/48H01L25/00
CPCH01L2224/32225
Inventor 殿村宏史长友义幸黑光祥郎
Owner MITSUBISHI MATERIALS CORP
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