Read-out amplifier

Abstract

The invention discloses a read-out amplifier, which at least comprises a read-out amplification circuit which is connected to bit lines of a selected storage unit and is used for reading out contents of the selected storage unit in an amplifying manner, a bit line voltage following circuit which is connected between two switching tubes of the read-out amplification circuit, is connected with adjacent bit lines of the bit lines of the selected unit and is used for making input voltage of the bit line voltage of the bit lines be the same in a following manner, and a following circuit pre-charging circuit which is connected to the bit line voltage following circuit and a pre-charging gating signal and is used for performing pre-charging under the control of the pre-charging gating signal. According to the read-out amplifier, the aim of accurately reading out stored values of the selected unit at high speed can be fulfilled.

Description

technical field [0001] The invention relates to a sense amplifier, in particular to a sense amplifier applied to a virtual ground structure flash memory. Background technique [0002] figure 1 It is a schematic diagram of a flash memory array in the prior art. Such as figure 1 As shown, each storage unit such as celln includes two storage bits C, D, and upper and lower. When WL(0)=Vwl, CG(0)=HV, CG(1)=0, BL <n-1>= 0, BL <n>When =Vbl, the storage bit D in the storage unit celln is selected, and the current Icell is generated in the celln at the same time. The memory cell celln passes through the bit line BL <n>connected to the sense amplifier, the bit line BL <n>The current in is Isense. Ideally, Isense=Icell, when Isense>Iref, DOUT=1, and when Isense<Iref, DOUT=0. [0003] figure 2 It is a structural schematic diagram of a sense amplifier used in flash memory in the prior art. Take the sense amplifier connected to the memory unit ...

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the problem that the flash storage cells in the prior art cannot be read correctly, the main purpose of the present invention is to provide a sense amplifier, which can realize the purpose of accurately reading the storage value of the selected cell at a high speed

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