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GaAs-Based Thermoelectric-Optoelectronic Microsensors in Self-Powered RF Transceiver Components

A micro-sensor, radio frequency transceiver technology, applied in radiation control devices and other directions, can solve problems such as energy loss obstacles, and achieve the effects of reducing power consumption, small size, and improving power supply capacity

Inactive Publication Date: 2016-06-29
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Modern Internet of Things technology requires RF transceiver components to work with low power consumption for a long time, and the energy loss of RF transceiver components is a major problem hindering the realization of this goal

Method used

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  • GaAs-Based Thermoelectric-Optoelectronic Microsensors in Self-Powered RF Transceiver Components
  • GaAs-Based Thermoelectric-Optoelectronic Microsensors in Self-Powered RF Transceiver Components
  • GaAs-Based Thermoelectric-Optoelectronic Microsensors in Self-Powered RF Transceiver Components

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Embodiment Construction

[0014] The gallium arsenide-based thermoelectric-photoelectric microsensor in the self-powered radio frequency transceiver assembly of the present invention is composed of a plurality of sensors 1 arranged in parallel, and the sensor 1 is composed of a plurality of thermocouples connected in series through metal wires 9 . The main part of the thermocouple is composed of an N-type gallium arsenide semiconductor arm 10 and an Au metal arm 11 . Doped P-type gallium arsenide is used to form the top connection line 2 of the semiconductor arm 10 and the Au metal arm 11 . The connection wire 2 made of P-type gallium arsenide and the semiconductor arm 10 form a PN junction 3 . The connection wire 2 forms an ohmic contact with the Au metal arm 11 as the cold end 4 of the thermocouple. The semiconductor arm 10 forms an ohmic contact with the metal wire 9 as the hot end 5 of the thermocouple. The sensor 1 is based on a gallium arsenide substrate 6 . Below the gallium arsenide substrat...

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Abstract

The invention discloses a gallium-arsenide-based thermoelectric-photoelectric micro sensor in a self-powered radio frequency transceiver module. The gallium-arsenide-based thermoelectric-photoelectric micro sensor is of an array structure composed of a plurality of identical sensor modules. Each sensor module is provided with a plurality of sets of thermoelectric couplers connected in series. The hot end of the sensor is placed on a heat concentrated portion (radiating plate) of a power amplifier, and the cold end of the sensor is far away from the heat concentrated portion and is close to an outer metal shell (heat sink plate), so that the larger temperature difference is formed between the hot end and the cold end. Direct-current voltage output is generated on the sensor array on the basis of the Seebeck effect, and the direct-current voltage conducts battery charging and energy storage on a battery to be charged. A PN junction is manufactured on the top of a semiconductor thermocouple arm of the sensor, a current path forward direction ordered arrangement is formed, the heat sink plate above the PN junction is provided with holes so as to increase the illumination area, and the photoelectric micro sensor capable of collecting light energy is formed. Compared with a traditional self-powered sensor collecting single energy, the gallium-arsenide-based thermoelectric-photoelectric micro sensor in the self-powered radio frequency transceiver module can collect light energy and heat energy at the same time to achieve the self-powered function, is smaller in size, and greatly improves power supply capability. In addition, the heat radiated when the radio frequency transceiver module works is effectively absorbed, and the radiating performance of the radio frequency transceiver module is improved.

Description

technical field [0001] The invention proposes a gallium arsenide-based thermoelectric-photoelectric microsensor in a self-powered radio frequency transceiver component of the Internet of Things, belonging to the technical field of microelectromechanical systems. Background technique [0002] Modern Internet of Things technology requires RF transceiver components to work with low power consumption for a long time, and the energy loss of RF transceiver components is a major problem hindering the realization of this goal. In the energy loss of common radio frequency transceiver components, the heat loss caused by heating is a key part. If this part of energy can be utilized, it will greatly improve the power consumption of radio frequency transceiver components. Moreover, unnecessary heat generation can be prevented from affecting the work of the radio frequency transceiver components. In addition, the photovoltaic effect can also be used to convert the most common light ener...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 廖小平闫浩
Owner SOUTHEAST UNIV
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