A pull method crystal growth furnace with coordinated control of thermal field

Abstract

The invention discloses a thermal field coordination control Czochralski crystal growth furnace. The crystal growth furnace comprises a thermal isolation outer housing and a growth chamber arranged in the thermal isolation outer housing; a crucible is arranged in the growth chamber; main electromagnetic induction coils used for heating the crucible are arranged at the exterior of the thermal isolation outer housing; auxiliary electromagnetic induction coils are arranged under the main electromagnetic induction coils; an interval is formed between the main electromagnetic induction coils and the auxiliary electromagnetic induction coils; a plurality of bottom air inlet pipes and a plurality of middle air inlet pipes extend into the thermal isolation outer housing in parallel; an airflow outlet is formed in the top of the thermal isolation outer housing, and is taken as a seed rod moving passage; telescopic insulation boards used for weakening heat transfer by radiation and top auxiliary resistance heating devices used for adjusting partial temperature of the growth chamber are arranged in the thermal isolation outer housing; the length, extending into the growth chamber, of the telescopic insulation boards can be adjusted. The crystal growth furnace can effectively restrain crystal defects, improves crystal quality, remarkably improves crystal finished product ratio, and reduces production cost.

Description

technical field [0001] The invention belongs to the field of crystal growth equipment, and more specifically relates to a pulling method crystal growth furnace with coordinated control of thermal field. Background technique [0002] The pulling method, also known as the Czochralski method and the Cz method, is the most popular bulk single crystal growth technology at present. The traditional pulling method device consists of a heating system (heating, temperature control and heat preservation), an atmosphere control system (vacuum, Air circuit, inflation), transmission system (lifting, rotating) and other components. The advantage of this method is that it can test and observe the growth interface, directional seed crystal, "necking" technology, "finishing" technology, rotatable crucible and crystal, so it is easy to control, can obtain faster growth rate and high product performance The uniformity and yield are much higher than other crystal growth methods. The disadvanta...

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Problems solved by technology

However, these inventions cannot overcome the inherent defects of the pulling method, which limits the equipment to the preparation of a certain special material and lacks versatility.

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