Fabric with characteristics of antibacterial property, memory property, static electricity resistance, and radiation resistance

An antistatic and anti-radiation technology, applied in the field of fabrics, can solve the problems of non-antibacterial and single function, and achieve the effect of strong three-dimensional effect and unique memory function on the fabric surface

Inactive Publication Date: 2016-04-06
杨洪兴
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the improvement of the quality of life, more and more people are aware of the importance of health, so people have higher and higher requirements for clothing. For example, clothing has its own antibacterial effect, while o

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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  • Fabric with characteristics of antibacterial property, memory property, static electricity resistance, and radiation resistance

Examples

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Embodiment Construction

[0013] see figure 1 , a kind of antibacterial memory antistatic anti-radiation fabric of the present invention, it comprises base fabric layer 1 and fabric layer 2, is provided with antibacterial layer 3 between described base fabric layer 1 and described fabric layer 2, and described antibacterial layer 3 is made of The silver ion antibacterial agent is composed, and the silver ion antibacterial agent is bonded between the base cloth layer 1 and the fabric layer 2.

[0014] The base fabric layer uses PTT memory color yarn as the warp yarn, and uses PET polyester fine denier special-shaped glossy yarn as the weft yarn; the warp yarn and weft yarn use 3 / 1 twill or 1 / 1 plain weave or 3 / 1 twill + 1 / 1 plain cavalry twill structure is woven into fabric.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Abstract

The present invention relates to a fabric with characteristics of antibacterial property, memory property, static electricity resistance, and radiation resistance. The fabric comprises a base cloth layer (1) and a fabric layer (2), wherein an antibacterial layer (3) is arranged between the base cloth layer (1) and the fabric layer (2), and comprises a silver ion antibacterial agent, the silver ion antibacterial agent is adhered between the base cloth layer (1) and the fabric layer (2), the base cloth layer uses PTT memory color yarns as warp yarns and uses special-shaped PET fine denier polyester bright yarns as weft yarns, and the warp yarns and the weft yarns are woven into the fabric by using the 3/1 twill or 1/1 plain or 3/1 twill and 1/1 plain calvarytwill weave structure. The fabric of the present invention has functions of antibacterial property bacterial killing so as to achieve an antibacterial effect, and further has characteristics of memory property, static electricity resistance, and radiation resistance.

Description

technical field [0001] The invention relates to a fabric, in particular to an antibacterial memory antistatic anti-radiation fabric. Background technique [0002] With the improvement of the quality of life, more and more people are aware of the importance of health, so people have higher and higher requirements for clothing. For example, clothing has its own antibacterial effect, while ordinary fabrics are single-layer fabrics. It has a single function and does not have antibacterial function. In addition, the traditional fabrics used to make clothing bodies do not have memory function, antistatic and anti-radiation effects at the same time. Contents of the invention [0003] The object of the present invention is to overcome the above disadvantages and provide an antibacterial memory antistatic anti-radiation fabric. [0004] The object of the present invention is achieved like this: a kind of antibacterial memory antistatic anti-radiation fabric, it comprises base clo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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IPC IPC(8): B32B15/02B32B33/00A41D31/02
Inventor 杨洪兴
Owner 杨洪兴
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