High-resolution X-ray energy spectrometer based on Si-PIN detector array

Abstract

The invention discloses a high-resolution X-ray energy spectrometer based on an Si-PIN detector array. Detectors of the energy spectrometer employ an m row*n column Si-PIN detector array, each row of the detectors share one charge sensitive amplifier, there are n columns all together, X rays detected by the detectors are respectively sent to a time discrimination unit and a signal filtering weighting unit through amplification of the amplifiers, and n time signals and single-path energy signals are formed. Inside a digital multichannel pulse-amplitude analyzer, accurate pulse amplitude is extracted after the time signals and the energy signals are processed by an offline correction module and a trapezoid shaping module, and an energy spectrum of the X rays is finally output. The high-resolution X-ray energy spectrometer has the following advantages: the detection efficiency of the detectors in detecting the X rays especially high-energy X rays is improved, the problem of introduction of quite large noise during application of the detector array under common conditions is solved, the signal-to-noise ratio is improved, and the energy resolution of the X-ray energy spectrometer is effectively improved.

Description

technical field [0001] The invention relates to the technical field of nuclear instruments, in particular to a high-resolution X-ray energy spectrometer using a Si-PIN detector array. Background technique [0002] X-ray energy spectrometer is an instrument that utilizes the different X-ray energies of different elements to expand the spectrum and perform component analysis. It is mainly composed of detectors, amplifiers, and pulse amplitude analyzers. It plays an important role in geological exploration, environmental monitoring, biomedicine and other fields. At present, the development of high-resolution X-ray energy spectrometer has become a research hotspot in the field of nuclear instruments. [0003] Si-PIN detector is a kind of semiconductor material Si as the detector substrate, adopts P-I-N (Positive-Intrinsic-Negative) structure, including a layer of P-type semiconductor (most carriers are holes, acceptor impurities are dominant), A layer of N-type semiconductor (...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above-mentioned technical problems, the object of the present invention is to provide a high-resolution X-ray energy spectrometer based on a Si-PIN detector array, which solves the problem of using a single Si-PIN detector to measure X-rays, especially high-energy X-rays, under conventional conditions. The problem of low detection efficiency, low count rate, and poor energy resolution

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