Protection circuit for gan power devices
A technology for power devices and protection circuits, applied in the field of communications, can solve the problem of GaN power devices being easily burned out, and achieve the effect of avoiding power failure of the protection circuit, and the purpose and advantages are concise and easy to understand.
Active Publication Date: 2021-06-01
SUNWAVE COMM
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[0006] Based on this, an embodiment of the present application provides a protection circuit for a GaN power device to solve the problem in the related art that the GaN power device is easily burned out due to power failure of the protection circuit of the GaN power device
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[0031] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, and are not intended to limit the present application. Based on the examples in this application, all other examples obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0032] Obviously, the accompanying drawings in the following description are only some examples or embodiments of the present application, and those skilled in the art can also apply the present application to other similar scenarios. In addition, it can also be understood that although such development efforts may be complex and lengthy, for those of ordinary skill in the art ...
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The present application provides a protection circuit for a GaN power device. The circuit includes: a negative voltage generating unit, a gate voltage switching unit, and a drain voltage switching unit; the negative voltage generating unit includes a negative voltage conversion subunit and a negative pressure comparison subunit, and the negative voltage conversion subunit is used to convert the power supply to Gate protection voltage; the negative voltage comparison subunit is used to output the drain voltage shutdown signal when the amplitude of the gate protection voltage is lower than the preset amplitude; by switching the drain voltage to the push-pull circuit subunit of the unit Respectively connected to the output terminal of the negative voltage comparison subunit, the common terminal, the drain of the GaN power device, and the power supply of the drain of the GaN power device. The push-pull circuit subunit is used to turn off the GaN power device according to the drain voltage shutdown signal. The drain is connected to the common terminal. The present application solves the problem that the GaN power device is easily burned out due to the power failure of the protection circuit of the GaN power device, and avoids the damage of the GaN power device caused by the power failure of the protection circuit of the GaN power device.
Description
technical field [0001] The present application relates to the communication field, in particular to a protection circuit of a GaN power device. Background technique [0002] At present, with the continuous upgrading of communication technology, the ability to process signals is getting higher and higher, and the traditional Laterally-Diffused Metal-Oxide Semiconductor (LDMOS) tube has been unable to meet the needs of the new generation of communication technology. The high density, ultra-bandwidth, high efficiency, high frequency range and other characteristics of Gallium Nitride (GaN) power devices are tailor-made for the new generation of communication technology. [0003] There is no power-on and power-off sequence for the gate voltage and drain voltage of the LDMOS transistor, that is, the gate voltage and drain voltage can be powered on or off arbitrarily without damage to the LDMOS transistor. However, GaN power devices are affected by their characteristics, and the r...
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IPC IPC(8): H02H7/20
CPCH02H7/205
Inventor雷文平张静静俞利光高衡林晓君
OwnerSUNWAVE COMM