Semiconductor package structure and manufacturing method of semiconductor package
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to avoid warpage, improve stability, and avoid cracking
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[0023] The present invention proposes a method for manufacturing a semiconductor package, comprising the following steps:
[0024] 1) A carrier substrate is provided, and a bonding layer is formed on the upper surface of the carrier substrate. The material of the carrier substrate is one of silicon, glass, ceramics, and a resin plate, and the bonding layer is The viscosity is lost, which in turn can facilitate the dissociation of the carrier substrate.
[0025] 2) Next, a first passivation layer is formed on the upper surface of the carrier substrate, the material of the first passivation layer is one or more of alumina, silicon oxide, and zirconia, and the first passivation layer is The manufacturing method of the layer is ALD or PECVD, and the thickness of the first passivation layer is 300-800 nanometers. In a specific embodiment, the first passivation layer is an aluminum oxide layer, which is deposited and formed by ALD method, The thickness of the first passivation laye...
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