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Memory device and refreshing method of virtual static random access memory

A static random access, memory technology, applied in static memory, information storage, digital memory information and other directions, can solve problems such as increasing power consumption, reducing burst access efficiency, and inability to

Active Publication Date: 2020-06-12
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the PSRAM device is operated at a low frequency (such as Internet of Things (IoT) applications), the read / write operations will always be interrupted by periodic refresh operations, thus reducing the efficiency of burst access and increasing power consumption. power, and even therefore cannot operate at low frequencies

Method used

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  • Memory device and refreshing method of virtual static random access memory
  • Memory device and refreshing method of virtual static random access memory
  • Memory device and refreshing method of virtual static random access memory

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Embodiment Construction

[0018] In order to make the above-mentioned technical solutions and other purposes, features, and advantages disclosed in this application more obvious and understandable, the preferred embodiments are listed below, together with the accompanying drawings, and are described in detail as follows:

[0019] figure 1 The memory device 100 described above according to some embodiments of the present application is shown. The memory device 100 includes a virtual SRAM 10 , a word line arbiter 20 , a self-refresh timer 30 , a controller 40 , an instruction decoder 50 , an address decoder 60 and a data buffer controller 70 . Wherein, the memory device 100 includes a column selector 110 , a column selector 120 and a memory array 130 formed by a plurality of PSRAM units.

[0020] The command decoder 50 can receive a frequency signal CLK, command information CMD and control information CTRL from a processor (such as an external processor or an internal host processor), and generate a sig...

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Abstract

The invention discloses a memory device and a refreshing method of a virtual static random access memory. The memory device comprises the virtual static random access memory, a word line arbiter and arefreshing controller. The word line arbiter receives a word line signal and segments the word line signal according to a burst length set value to obtain a segmented word line signal. In a synchronization mode, the refresh controller provides a first refresh trigger signal corresponding to the word line signal to refresh the virtual static random access memory. In an intelligent refresh mode, the refresh controller provides a second refresh trigger signal corresponding to the segmented word line signal to refresh the virtual static random access memory.

Description

technical field [0001] The application relates to a virtual static random access memory device and a method for refreshing the virtual static random access memory. Background technique [0002] Virtual static random access memory (Pseudo Static Random Access Memory, PSRAM) provides an interface similar to static random access memory (Static Random Access Memory, SRAM) to a dynamic random access memory (Dynamic Random Access Memory, DRAM) as Basic memory. PSRAM is widely used in mobile devices and other electronic devices. [0003] PSRAM has the low cost and large capacity of DRAM and the operation interface of SRAM. Similar to the structure of the DRAM unit, the capacitor of the PSRAM unit also has a leakage current problem, so it is necessary to perform a refresh operation on the PSRAM unit periodically in order to maintain its data (that is, the charge stored in the capacitor) accuracy. In order to match the interface of SRAM, PSRAM hides the refresh function in the me...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/406
CPCG11C11/40615
Inventor 侯建杕杜盈德
Owner WINBOND ELECTRONICS CORP