Unlock instant, AI-driven research and patent intelligence for your innovation.

A memory device and method for refreshing virtual static random access memory

A static random access and memory technology, which is applied in static memory, information storage, digital memory information, etc., can solve the problems of increasing power consumption, reducing burst access efficiency, operating usage, etc., and achieves the effect of efficient refresh operation

Active Publication Date: 2022-03-15
WINBOND ELECTRONICS CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the PSRAM device is operated at a low frequency (such as Internet of Things (IoT) applications), the read / write operations will always be interrupted by periodic refresh operations, thus reducing the efficiency of burst access and increasing power consumption. power, and even therefore cannot operate at low frequencies

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A memory device and method for refreshing virtual static random access memory
  • A memory device and method for refreshing virtual static random access memory
  • A memory device and method for refreshing virtual static random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] In order to make the above-mentioned technical solutions and other purposes, features, and advantages disclosed in this application more obvious and understandable, the preferred embodiments are listed below, together with the accompanying drawings, and are described in detail as follows:

[0019] figure 1 The memory device 100 described above according to some embodiments of the present application is shown. The memory device 100 includes a virtual SRAM 10 , a word line arbiter 20 , a self-refresh timer 30 , a controller 40 , an instruction decoder 50 , an address decoder 60 and a data buffer controller 70 . Wherein, the memory device 100 includes a column selector 110 , a column selector 120 and a memory array 130 formed by a plurality of PSRAM units.

[0020] The command decoder 50 can receive a frequency signal CLK, command information CMD and control information CTRL from a processor (such as an external processor or an internal host processor), and generate a sig...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The application discloses a memory device and a refresh method of a virtual static random access memory. The memory device includes a virtual static random access memory, a word line arbiter and a refresh controller. The word line arbiter receives a word line signal, and segments the word line signal according to a burst length setting value to obtain a segmented word line signal. In a synchronous mode, the refresh controller provides a first refresh trigger signal corresponding to the word line signal to refresh the virtual SRAM. In an intelligent refresh mode, the refresh controller provides a second refresh trigger signal corresponding to the segment word line signal to refresh the virtual SRAM.

Description

technical field [0001] The application relates to a virtual static random access memory device and a method for refreshing the virtual static random access memory. Background technique [0002] Virtual static random access memory (Pseudo Static Random Access Memory, PSRAM) provides an interface similar to static random access memory (Static Random Access Memory, SRAM) to a dynamic random access memory (Dynamic Random Access Memory, DRAM) as Basic memory. PSRAM is widely used in mobile devices and other electronic devices. [0003] PSRAM has the low cost and large capacity of DRAM and the operation interface of SRAM. Similar to the structure of the DRAM unit, the capacitor of the PSRAM unit also has a leakage current problem, so it is necessary to perform a refresh operation on the PSRAM unit periodically in order to maintain its data (that is, the charge stored in the capacitor) accuracy. In order to match the interface of SRAM, PSRAM hides the refresh function in the me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/406
CPCG11C11/40615
Inventor 侯建杕杜盈德
Owner WINBOND ELECTRONICS CORP