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Method, device and storage medium for measuring threshold voltage distribution in nand flash memory

A threshold voltage distribution and threshold voltage technology, applied in the field of solid-state storage, can solve the problem that the threshold voltage distribution of NAND flash memory cannot be described in detail.

Active Publication Date: 2022-07-12
GUANGDONG UNIV OF TECH
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Problems solved by technology

[0004] The purpose of the present invention is to at least solve one of the above-mentioned technical defects, especially in the prior art, the distribution information of the threshold voltage is directly determined by scanning the offset of the reference voltage, and the obtained threshold voltage distribution information cannot describe the NAND flash memory in detail The technical defect of the threshold voltage distribution of the

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  • Method, device and storage medium for measuring threshold voltage distribution in nand flash memory

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[0048] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0049] It will be understood by those skilled in the art that the singular forms "a", "an", "the" and "the" as used herein can include the plural forms as well, unless expressly stated otherwise. It should be further understood that the word "comprising" used in the specification of this application refers to the presence of stated features, integers, steps, operations, elements and / or components, but does not preclude the presence or...

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Abstract

The invention discloses a method, device, storage medium and computer equipment for measuring threshold voltage distribution in NAND flash memory, which improves the data processing flow, so that the template state of each storage cell, the cell state before and after the change are all the same. It can be obtained, so that the threshold voltage distribution of all cell states in the corresponding programming state can be obtained; in addition, for the case where the threshold voltage width of the programming state is irregular and the threshold voltage interval swept by the positive offset of the reference voltage will overlap. , the present invention removes the overlapping area between adjacent cell states in the obtained first threshold voltage distribution map, and the finally obtained second threshold voltage distribution map can describe the threshold voltage distribution of the target NAND flash memory more clearly and in detail, The maximum shift step size required for the threshold voltage width of the corresponding state scanned by each reference voltage can also be calculated according to the first threshold voltage distribution map and the second threshold voltage distribution map, respectively.

Description

technical field [0001] The present invention relates to the technical field of solid-state storage, and in particular, to a method, device, storage medium and computer equipment for measuring threshold voltage distribution in NAND flash memory. Background technique [0002] At present, NAND flash memory uses a calibrated threshold voltage value to represent ideally stored data, but due to the interference of various noises, the threshold voltage of the memory cells of NAND flash memory will shift, and the actual threshold voltage obtained is within a certain range. A probability distribution is presented within. In order to read the storage information of the flash memory cell, it is necessary to use the reference voltage to determine the interval in which the threshold voltage of the memory cell is located. [0003] In the prior art, the distribution of the threshold voltage in the NAND flash memory is determined by scanning the offset of the reference voltage. If the memo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/50
CPCG11C29/50G11C2029/5004
Inventor 韩国军黄三维朱广平方毅
Owner GUANGDONG UNIV OF TECH
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