Height control system and method for crucible high temperature line, growth furnace

Abstract

The invention provides a height control system and method of a crucible high-temperature line, and a growth furnace. The system includes a temperature acquisition unit, a control unit and an execution unit, wherein the temperature acquisition unit is used to acquire the actual temperatures corresponding to different heights of the crucible, and Send it to the control unit; the control unit is used to obtain the actual height value of the crucible high temperature line based on the corresponding actual temperature at different heights of the crucible, and compare the actual height value with the preset position height value of the crucible high temperature line; the execution unit According to the comparison result of the control unit, the crucible and the induction coil surrounding the crucible are relatively moved up and down, so that the actual height value is consistent with the preset position height value. The height control system of the high temperature line of the crucible provided by the present invention can obtain the accurate position of the high temperature line of the crucible in real time, and at the same time can realize the closed-loop control of the position of the high temperature line of the crucible, thereby improving the accuracy and reliability of the process.

Description

technical field [0001] The invention relates to the technical field of growth furnaces, in particular to a height control system and method for a crucible high-temperature line, and a growth furnace. Background technique [0002] The physical vapor transport (Physical Vapor Transport, hereinafter referred to as PVT) method is one of the mainstream methods for preparing silicon carbide crystals. Such as figure 1 As shown, the specific process of growing SiC single crystal by PVT method is as follows: usually SiC crystal 1 is placed on the top of graphite crucible 2 as a seed crystal, SiC powder 3 is placed on the bottom of graphite crucible 2 as a material source, and induction coil 4 places graphite crucible 2 Induction heating, the internal temperature of the crucible reaches about 2300°C, so as to realize crystal growth. In addition, cooling water is introduced into the gap between the outer quartz tube 5 and the inner quartz tube 6 to play a cooling role. During the cr...

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Problems solved by technology

[0004] However, due to the lack of real-time monitoring data during the crystal growth process, the existing technology completely relies on theoretical values ​​to estimate and adjust the height of the crucible high-temperature line 8, which is open-loop control. This control method has poor accuracy and low precision. Control of the entire process parameters

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