Manufacturing method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of photoelectric performance, luminous brightness, and forward voltage of antistatic ability that need to be improved.

Inactive Publication Date: 2021-01-29
HC SEMITEK ZHEJIANG CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the number of holes provided by the P-type semiconductor layer is much smaller than the number of electrons provided by the N-type semiconductor layer, so the photoelectric performance of the LED (including luminous brightness, antistatic ability, forward voltage, etc.) needs to be improved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer
  • Manufacturing method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer
  • Manufacturing method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

[0036] Epitaxial wafers are the primary products in the LED manufacturing process. Currently the most widely used is the GaN-based LED epitaxial wafer. GaN-based LED epitaxial wafers are mainly manufactured in reaction chambers.

[0037] figure 1 Schematic diagram of the structure of the reaction chamber provided by the embodiment of the present disclosure. see figure 1 , the reaction chamber 100 is provided with a graphite disk 10, a plurality of first gas outlets 21 and a plurality of second gas outlets 22, the graphite disk 10 is rotatably arranged at the bottom of the reaction chamber 100, a plurality of first gas outlets 21 and a plurality of Two second gas outlets 22 are arranged alternately on the top of the reaction cha...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Doping concentrationaaaaaaaaaa
Login to View More

Abstract

The invention provides a manufacturing method of a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The manufacturing method comprises the following steps: placing a substrate in a reaction chamber; sequentially growing a buffer layer, an N-type semiconductor layer and an active layer on the substrate; introducing a carrier gas into a liquid Mg source, wherein the liquid Mg source is carried in the carrier gas; introducing carrier gas carrying the liquid Mg source into the reaction chamber, and growing a P-type semiconductor layer on the active layer; and annealing the P-type semiconductor layer. By introducing the carrier gas into the liquid Mg source, the contact between the carrier gas and the Mg source can be effectively increased, so that the liquid Mg source carried in the carrier gas is increased, the doping concentration of Mg in the P-type semiconductor layer is increased, the number of holes provided by the P-type semiconductor layer is increased, and photoelectric properties such as luminance, antistatic capacity and forward voltage of an LED are improved.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a method for manufacturing a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor component capable of emitting light, which has the characteristics of small size, long service life, colorful colors and low energy consumption. As a highly influential product in the information optoelectronics industry, LEDs are widely used in lighting, display screens, signal lights, backlights, mobile phones, toys and other fields. [0003] The most important thing in the LED manufacturing process is the manufacture of epitaxial wafers. In related technologies, the manufacturing process of LED epitaxial wafers mainly uses carrier gas to transport reactants to the growth substrate, the reactants react on the growth substrate to form epitaxial materials, and the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L33/32
CPCH01L33/007H01L33/06H01L33/12H01L33/325
Inventor张武斌梅劲王坤刘春杨
OwnerHC SEMITEK ZHEJIANG CO LTD