gas shower head

A gas shower head and gas chamber technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of gas component retention, affecting the steepness of the film section, etc., to reduce pre-reaction, reduce The effect of uniform temperature and flow

Active Publication Date: 2022-04-15
北京中科重仪半导体科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the existing gas nozzles all have the design of homogenizing gas, so that the uniformity of the gas ejected from each nozzle is better, but there is usually a vortex area in the inner space of the gas nozzle, which leads to the retention of gas components and ultimately affects Steepness of film cross-section

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Embodiment Construction

[0023] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown.

[0024] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the part is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0025] If it is to describe the situation directly on another layer or another area, the expression "directly on" or "on and adjacent to" will be used herein.

[0026] In the following, man...

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Abstract

The present application discloses a gas shower head. The gas shower head includes a first casing, the first casing has an air inlet and a first air chamber communicated with the inlet; a second casing, the second One side of the casing is connected to the first casing, and the other side of the second casing is provided with an air outlet, and the second casing has a gas outlet corresponding to the first air chamber and connected to the The second air chamber connected to the air outlet; the sieve plate, located between the first housing and the second housing, the sieve plate has a plurality of sieve holes, the first air chamber and the second air chamber The two air chambers are connected through the plurality of sieve holes; wherein, the ventilation capacity of the sieve holes on the sieve plate increases as the distance between the sieve holes and the air inlet increases. By controlling the space of the first air chamber and adopting a sieve plate with non-uniform ventilation, the gas can be balanced by the first air chamber and the sieve plate, reducing the pressure gradient of the gas entering the second air chamber, and realizing the gas layer in the second air chamber It can also effectively suppress the generation of eddy current.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more particularly, to a gas shower head for chemical vapor deposition. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, CVD) refers to the method of chemical gas or steam reacting on the surface of the substrate to synthesize coatings or nanomaterials, among which Metal-organic Chemical Vapor Deposition (MOCVD) is more common. Metal organic compound chemical vapor deposition technology has the advantages of wide application range, easy growth control, good epitaxial layer uniformity, and large-scale production, so it is widely used. Usually, the gas that participates in the film growth reaction is guided into the reaction chamber of the MOCVD system by the pipeline, and the gas is homogenized or distributed to the nozzle by the gas shower head, and is ejected according to a pre-designed path. The uniformity of the gas will directly affe...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C23C16/455
CPCC23C16/45565C23C16/45504
Inventor张瑭张天明
Owner北京中科重仪半导体科技有限公司