115results about How to "Reduce memory effect" patented technology

Battery charger (10) may include a power source circuit (22) for charging rechargeable batteries (58) when a battery pack (50) is connected directly to the battery charger or is connected thereto with an adapter (30) interposed therebetween. The adapter may include a discharging circuit (42) for discharging the rechargeable batteries. The adapter may also include a switch (48) for alternatively connecting the rechargeable batteries with the discharging circuit or the charging circuit of the battery charger. The battery pack may have a memory (61) storing a flag indicating whether a refresh process is required. The adapter may further include a control portion (41) for controlling the switch. When the battery pack has been connected to the battery charger via the adapter, the control portion may preferably controls the switch on the basis of the flag stored in the memory of the battery pack.

The invention relates to an ICP-MS measuring method of trace metal impurities in high purity lead, which adopts a high-purity nitric acid dissolving sample and uses the electrolytic method to remove lead in the high purity nitric acid dissolving sample, and utilizes inductive coupled plasma mass spectrometer and adopts peak jumping mode to scan and test blank, work-curve standard solution and sample elements to be detected so as to obtain the content of the elements to be detected. The ICP-MS measuring method of trace metal impurities in high purity lead is convenient in operation and can effectively eliminate matrix effect caused by excessively high total solid content and avoid pollution during the preparation process of samples, thus greatly reducing memory effect and obviously increasing measuring accuracy. The ICP-MS measuring method of trace metal impurities in high-purity lead is applicable to the analysis and testing of the content of a plurality of trace metal impurities.

The invention belongs to the technical field of data converters in integrated circuit design, and discloses a double-input operational amplifier shared margin gain amplifying circuit. The amplifying circuit comprises a double-input operational amplifier, a clock generating circuit, a sub digital-to-analog converter, a sub analog-to-digital converter, a capacitor, a switch and the like. Two groups of differential input pair tubes are controlled through the switch controlled by bidirectional overlapped clocks and embedded inside the operational amplifier by adopting the operational amplifier of two groups of input differential pairs and are alternately used at two phases of the clocks, and meanwhile the input differential pairs are alternately reset to a common-mode input voltage so as to fully eliminate the influence of memory effect and inter-stage feed-through in the traditional circuit, improve the signal establishing precision under the condition of keeping the same area, power consumption and circuit complexity and further improve the precision of analog-to-digital conversion.

In a Doherty amplifier (100), the amplifier's input is connected to a main device (102) via a first branch and to a peak device via a second branch. The first branch has a first frequency-dependent input impedance with a first real part and a first imaginary part. The second branch has a second frequency-dependent input impedance with a second real part and a second imaginarypart. The first and second imaginary parts have opposite polarity. The first and 5 second imaginary parts have a same magnitude so as to compensate each other in the frequencyband. The first imaginary part and the second imaginary part implement a first phase shift in the. first branch and a second phase shift in the second branch, respectively. The first and second phase shifts each have a magnitude of substantially 45 degrees substantially in the middle of the frequency band and are of opposite polarity. The phase difference of the 10 input signals to the main (102) and peak (104) devices stays largely constant over the frequency band.

A transmission channel configured to transmit high-voltage pulses and to receive echoes of the high-voltage pulses includes a high voltage buffer, a voltage clamp and a switch. The voltage clamp may include clamping transistors and switching off transistors coupled together in series with body diodes in anti-series. The transmission channel may include a reset circuit configured to bias the transmission channel between pulses. The switch may include a bootstrap circuit.

The invention belongs to the technical field of pipeline analogue-to-digital converters, and relates to a novel Microsoft data access component (MDAC) structure applied to the pipeline analogue-to-digital converter. The MDAC structure comprises an operational amplifier, a first switched capacitor unit and a second switched capacitor unit, wherein each of the first and second switched capacitor units consists of a sampling capacitor CS, a feedback capacitor CF, a load capacitor CL and a switch. In a sampling phase PhiS, the sampling capacitor samples an input signal, and simultaneously the operational amplifier keeps voltage on the feedback capacitor to charge and discharge the load capacitor; in a resetting phase PhiR, the sampling capacitor is suspended, the input end of the operational amplifier is connected with a common mode level Vcomi, the output end of the operational amplifier is connected with a common mode level Vcomo, and the voltage on the feedback capacitor is reset; in a transmission phase PhiT, the operational amplifier performs margin amplification on a sample on the sampling capacitor, and transmits margin voltage; and in a clearing phase PhiC, the two ends of the sampling capacitor are both connected with the common mode level Vcomi, and charges are cleared to prepare for the next sampling. The MDAC structure can reduce the power consumption of the analogue-to-digital converter and increase a conversion rate.

The object of this invention was to create starting copper cathodes which prevent a memory effect during copper electrolysis, achieving a high production output of electrolytic copper and which can also be manufactured from directly shaped copper sheeting material in the form of a coil. A suitable method of producing starting cathodes for processing copper sheet produced by conventional methods. The proposed starting cathodes are made of milled copper sheets with a thickness of 0.3 to 1.2 mm, is soft annealed after milling and has a strength of 210 to 240 N/mm2. The copper sheet is cut to the length and width determined by the dimensions of the electrolysis bath and has a flat, fat-free, burless surface. Ear strips of copper sheet with a thickness of 0.3 to 0.6 mm are mounted on the suspension side.

The invention discloses a method for in-situ distillation and on-line measurement of Os in a Carius tube. The method comprises the following steps: a sample is decomposed by inverse aqua regia in a Carius tube method, the generated OsO4 steam enters into a carrier gas port of an atomizer under carry of Ar gas through a special interface, Ir solution is introduced into a liquid inlet of the atomizer, and mixed aerosol comprising Os and Ir is formed at a nozzle of the atomizer. According to the invention, in comparison with the prior art, the Ar gas enters into the carrier gas port of the atomizer along with the Os steam and reaches a rectangular pipe, and the Ir standard solution introduced from the liquid inlet pipe is used for on-line discrimination and correction, so that the measuring precision is improved; after the sample is dissolved by the Carius tube, the in-situ distillation is directly carried out without separation, and meanwhile, a ratio and a content of an Os isotope can be obtained by on-line precise measurement. In comparison with the original on-line measurement method, the method, provided by the invention, is difficult to put out a fire, and in comparison with a solution feeding measurement method, a memory effect is remarkably reduced.

A pixel circuit for a display device includes a drive transistor configured to control an amount of current to a light-emitting device depending upon a voltage applied to a gate of the drive transistor; a second transistor connected to the gate of the drive transistor and a second terminal of the drive transistor such that, when the second transistor is in an on state the drive transistor becomes diode-connected such that the gate and a second terminal of the drive transistor are connected through the second transistor; a light-emitting device that is connected at a first node to the second terminal of the drive transistor and at a second node to a first voltage supply; a third transistor that is connected between an initialization voltage supply and the first node of the light-emitting device, wherein a node N1 is a connection of the second terminal of the drive transistor, the first node of the light-emitting device, and the third transistor; and at least one capacitor having a first plate that is connected to the gate of the drive transistor and a second plate that is connectable to a reference voltage supply. The pixel circuit is operable in an initialization phase to initialize circuit voltages, in a compensation phase to compensate for variations in drive transistor properties, in a programming phase to program a greyscale value to the pixel circuit, and in an emission phase in which the light-emitting device emits light corresponding to the greyscale value.

A power source apparatus for an electric automobile is provided with a battery system, having a driving battery to power an automobile driving motor and a battery control circuit to control driving battery charging and discharging as well as to compute driving battery remaining capacity, and an accessory battery to power automobile electrical accessories. When the automobile is in the stationary state a, charging circuit, which controls charging between the driving battery and accessory battery, charges the driving battery to a specified state with accessory battery power. The battery control circuit corrects the value of driving battery remaining capacity to a specified battery capacity, and subsequently charges the accessory battery with the driving battery to bring driving battery remaining capacity to a specified level.

The invention provides a measuring device and a measuring method of high-concentration tritium in a gas. The measuring device is composed of two cylindrical ionization chambers having the same structure and material while different dimensions. The measuring method comprises the following steps: sequentially passing a tritium-containing gas by the two ionization chambers in the measuring device provided by the invention, driving the two ionization chambers in the measuring device to work under a compensation mode, and obtaining the concentration of tritium in the gas in a signal coincidence manner. The measuring device provided by the invention can completely eliminate the effect of memory effect caused by tritium adsorption of the ionization chamber walls on the measurement result when measuring the high-concentration tritium in the gas so as to accurately measure the tritium in the gas for a long time under a high concentration condition. The measuring device and the measuring method provided by the invention completely meet real-time and continuous measurement demands on the high-concentration tritium in various occasions.

A plasma nitriding method includes performing a high nitrogen-dose plasma nitriding process on an object having an oxide film by introducing a processing gas containing a nitrogen gas into a processing chamber of a plasma processing apparatus and generating a plasma containing a high nitrogen dose; and performing a low nitrogen-dose plasma nitriding process on the object by generating a plasma containing a low nitrogen dose. After the performing the high nitrogen-dose plasma nitriding process is completed, a plasma seasoning process is performed in the chamber by generating a nitrogen plasma containing a trace amount of oxygen by introducing a rare gas, a nitrogen gas and an oxygen gas into the chamber and setting a pressure in the chamber in a range from about 532 Pa to 833 Pa and a volume flow rate ratio of the oxygen gas in all the gases in a range from about 1.5% to 5%.

The invention provides a semi-insulated GaN film and a preparation method thereof. The method comprises the steps of preparing a substrate; developing a buffering layer on the substrate by the metal organic chemical vapor deposition method; developing a gallium nitride die plate on the buffering layer; developing a carbon-doped semi-insulated gallium nitride film layer on the gallium nitride die plate. The semi-insulated gallium nitride prepared by the method is high in quality, high in purity, small in impurity memory effect, and high in insulating performance, and can effectively reduce current leakage.

The invention discloses a sampling device for water quality detection and a using method of the sampling device. The sampling device is a portable or on-line sampling and separating system capable oftaking out a plurality of samples from a water body to be monitored in situ by utilizing the principle of a liquid communicating vessel,a main body of the system consists of a filter, a flow control valve, a first three-way ball valve, a portable sample separation pipe, a second three-way ball valve and an online sample separation pipe, and a portable colorimetric component or an online sample preparation component is combined to finish the sampling, sample preparation and detection tasks together. The device is in modular design, realizes the instrument design concept of separating the sampletaking and matching from detection and analysis, and is convenient for the daily maintenance and troubleshooting. On one device, the manual portable sampling and automatic online sampling modes are realized at the same time, the spectrophotometry principle can be used, and the water quality state can be conveniently detected by adopting the electrochemical sensor principle. According to the present invention, the automatic cleaning step can be set, and the memory effect of two times of detection is reduced; a portable or on-line sampling mode can be selected and applied according to the use condition, and the multi-purpose, multi-mode and multi-parameter detection requirements are met.

The present invention relates to drift tubes for ion mobility spectrometers. In one embodiment, the drift tube of the present invention uses a simplified design having helical resistive material to form substantially constant electric fields that guide ion movements. The drift tube for ion mobility spectrometers described herein is constructed with a non-conductive structure. This configuration provides a robust ion mobility spectrometer that is simple to build. One feature of the present invention is that the drift tube design described herein enables the ion mobility spectrometer to be built with a lower weight, lower power consumption, lower manufacturing cost, and free of sealants.

The invention relates to an infrared detector for preparing titanium oxide electrodes through ion implantation. A titanium oxide thin film is arranged on a support layer and connecting metals, the titanium oxide thin film comprises a semiconductor titanium oxide thin film body in the bridge surface area and a conductor titanium oxide thin film in the bridge leg area, titanium oxide is used as a thermo-sensitive layer thin film, ion implantation is conducted on a part of the titanium oxide thin film, and the part of the titanium oxide thin film becomes the conductor titanium oxide thin film to place metal electrodes in the prior art; the technology is simple and the productivity is high. The invention further relates to the preparation method of the detector. The method comprises the steps that the titanium oxide thin film, a first protection layer and photoresist are prepared on the support layer in sequence; a first protection layer thin film which is not covered by the photoresist on the titanium oxide thin film is removed, the exposed titanium oxide thin film is subjected to ion implantation, and the titanium oxide thin film subjected to ion implantation is the conductor titanium oxide thin film; the photoresist is removed, a second protection layer is deposited, and structure releasing is conducted.

The embodiment of the invention provides a circuit for reducing the memory effect of a radio-frequency power amplifier, an output circuit of the radio-frequency power amplifier, and the radio-frequency power amplifier. The harmonic impedance of the radio-frequency power amplifier can be controlled in an optimal range while the memory effect of the radio-frequency power amplifier is reduced. The circuit for reducing the memory effect of the radio-frequency power amplifier comprises a first micro-strip line, a second micro-strip line, a first capacitor and a second capacitor, wherein one end of the first micro-strip line is connected with one end of the second micro-strip line; one end of the first capacitor is connected with one end of the first micro-strip line; the other end of the first capacitor is grounded; one end of the second capacitor is connected with the other end of the second micro-strip line; the other end of the second capacitor is grounded; for the fundamental impedance and the envelop impedance of the radio-frequency power amplifier, the first capacitor is in an open-circuit state; and, for the envelop impedance of the radio-frequency power amplifier, the second capacitor is in a short-circuiting state.

The invention discloses a control method and system for eliminating the power battery memory effect. A power battery management system makes a finished automobile control device control a finished automobile to enter a memory effect eliminating work mode by sending a request that the finished automobile enters the memory effect eliminating work mode to the finished automobile controller, and the power battery management system adjusts the SOC use range sent to the finished automobile controller and the currently allowed maximum charging/discharging power of a power battery in real time through the magnitude relation between the current SOC and a first/second preset SOC of the power battery, so that the finished automobile conducts completely discharging and fully charging on the power battery, 100% use of SOC of the power battery is achieved, and thus the power battery memory effect is eliminated to the maximum degree.

A first semiconductor layer consisting of AlGaInP is formed on a substrate consisting of GaAs by crystal growth while adding magnesium (Mg) that is a p-type dopant to the first semiconductor layer. A second semiconductor layer consisting of GaAs is then grown on the first semiconductor layer without adding any magnesium to the second semiconductor layer. Thus, the second semiconductor layer can prevent unintended doping (memory effect) produced by magnesium.