Single particle injection method and single particle injection equipment

Abstract

The invention discloses a single-particle injection method and single-particle injection equipment, and relates to the field of storage, the single-particle injection method is suitable for the single-particle injection equipment, the single-particle injection equipment structurally comprises a host and at least one single-particle injection device, and the single-particle injection method comprises the steps that the host receives a starting instruction, the method comprises the following steps: starting a single particle injection device, transmitting a starting instruction to the single particle injection device, responding to the starting instruction, generating a field effect by at least one single particle injection device, transmitting the field effect to a receiving target, responding to the field effect, and converting a potential state of the receiving target. According to the single-particle injection method and the single-particle injection equipment provided by the embodiment of the invention, the field effect is released and transmitted to the receiving target through the single-particle injection device, and the conversion of the high and low states of the potential state of the semiconductor device of the receiving target is induced through the field effect. And field effect release, intensity and period can be controlled according to requirements so as to realize artificial single particle injection.

Description

technical field [0001] Embodiments of the present invention relate to the field of storage, and relate to a single particle injection method and single particle injection equipment. Background technique [0002] Single-Event Upsets (SEU, Single-Event Upsets) refer to the phenomenon that a single high-energy particle in the universe enters the sensitive area of ​​a semiconductor device, causing the logic state of the device to be reversed. In addition, due to the complex space environment, including light field effects, magnetic field effects, electric field effects and thermal field effects, these field effects have an impact on complementary metal-oxide-semiconductor (CMOS, Complementary Metal-Oxide-Semiconductor) electronic components in computers , resulting in performance degradation of semiconductor devices and loss of stored data. [0003] In the research process of SEU, it is found that based on the influence of SEU on electronic components, especially non-volatile m...

AI Technical Summary

Problems solved by technology

At this stage, natural conditions such as cosmic rays are usually used to achieve single-particle injection to induce SEU. Currently, artificial single-particle injection is still in the exploratory stage.

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