Pattern forming system and substrate processing system

a substrate processing and pattern forming technology, applied in the direction of basic electric elements, electrical equipment, electric discharge tubes, etc., can solve the problem of unmonitored replacement and achieve the effect of accurately and quickly determining the replacement time of the focus ring

Inactive Publication Date: 2016-10-13
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a method and apparatus for determining the replacement time of a focus ring that surrounds a substrate during a process of etching a film on the substrate. This focus ring is used to increase the uniformity of the pattern formed on the substrate. The method involves measuring the shape or critical dimension of the pattern, and then determining the replacement time of the focus ring based on the measured data. The apparatus includes a measurement device and a determination device for carrying out this process accurately and quickly. Overall, this technology allows for better control over the pattern formation process and ensures consistent quality.

Problems solved by technology

However, the focus ring is replaced without monitoring an erosion state of the focus ring.

Method used

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  • Pattern forming system and substrate processing system
  • Pattern forming system and substrate processing system
  • Pattern forming system and substrate processing system

Examples

Experimental program
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Embodiment Construction

[0049]Hereinafter, illustrative embodiments will be described with reference to the accompanying drawings.

[0050]A determination apparatus (measurement apparatus) in accordance with an illustrative embodiment measures uniformity of a pattern (etching pattern) in a surface of a wafer (substrate). Here, the pattern is formed by etching a film on the wafer by a plasma processing apparatus. The uniformity of the pattern in the surface of the wafer is, for example, uniformity of a critical dimension (CD) or a shape of the pattern in the surface of the wafer. If the measured uniformity of the pattern in the surface of the wafer is greater than a certain critical value, the determination apparatus determines a replacement time of a focus ring provided within the plasma processing apparatus.

[0051]The determination apparatus measures the critical dimension (CD) or the shape of the pattern by a scatterometry method. The scatterometry method as a light scattering method includes, for example, a...

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Abstract

A pattern forming system includes: a forming device configured to form a pattern by etching a film on a substrate in a processing vessel; a member in the processing vessel that is positioned in the processing vessel to increase uniformity of the pattern in a surface of the substrate; a measurement apparatus configured to measure a shape or a critical dimension of the pattern; a control device configured to control a temperature of the member in the processing vessel; a processing gas supply unit configured to introduce a processing gas to the processing vessel; and an exhaust device configured to depressurize an inside of the processing vessel to a certain pressure level. The control device is configured to control the temperature of the member in the processing vessel based on the measured shape or the measured critical dimension of the pattern through a feedback control.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This is a divisional application of U.S patent application Ser. No. 13 / 430,905, filed on Mar. 27, 2012 which claims the benefit of Japanese Patent Application No. 2011-070947 filed on Mar. 28, 2011, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present disclosure relates to a pattern forming system and a substrate processing system.BACKGROUND OF THE INVENTION[0003]In a plasma processing apparatus that etches a film on a substrate, a focus ring is provided to surround the substrate in order to increase uniformity (etching uniformity) of a pattern in a surface of the substrate (for example, Patent Documents 1 and 2). Since the focus ring is etched and eroded by plasma as time passes by, the uniformity of the pattern in the surface of the substrate is decreased. Therefore, the focus ring is regularly replaced according to a using time thereof.[0004]Patent Document 1: Japanese Patent Laid-...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01J37/32
CPCH01J37/32642H01J37/32009H01J37/32724H01J2237/334H01J37/3299H01J37/32972H01J37/3244H01J37/32807H01J37/3288H01L21/3065H01J2237/3343
InventorTANAKA, KEISUKESAWAI, KAZUONAGAHATA, HIROSHI
OwnerTOKYO ELECTRON LTD